Si6423DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ( ) I (A) APPLICATIONS DS DS(on) D Load Switch 0.0085 V = -4.5 V -9.5 GS 0.0106 V = -2.5 V -8.5 -12 GS 0.014 V = -1.8 V -7.5 GS S* TSSOP-8 G D D 1 8 * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 S S 3 6 G D 4 5 Top View D Ordering Information: Si6423DQ Si6423DQ-T1 (with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage V -12 DS VV Gate-Source Voltage V 8 GS T = 25 C -9.5 -8.2 A aa Continuous Drain CurrentContinuous Drain Current (T(T = 150 = 150 C)C) II JJ DD T = 70 C -8 -6.5 A AA Pulsed Drain Current (10 s Pulse Width) I -30 DM a Continuous Source Current (Diode Conduction) I -1.35 -0.95 S T = 25 C 1.5 1.05 A aa Maximum Power DissipationMaximum Power Dissipation PP WW DD T = 70 C 1.0 0.67 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 60 83 aa MiMaximum Junction-to-Ambient J ti t A bi t RR thJA Steady State 100 120 C/WC/W Maximum Junction-to-Foot Steady State R 35 45 thJF Notes a. Surface Mounted on 1 x 1 FR4 Board. Document Number: 72257 www.vishay.com S-31419Rev. A, 07-Jul-03 1Si6423DQ New Product Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = -400 A -0.40 -0.8 V GS(th) DS GS D V = 0 V, V = 8 V Gate-Body Leakage I DS GS 100 nA GSS V = -9.6 V, V = 0 V -1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = -9.6 V, V = 0 V, T = 70 C -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -20 A D(on) DS GS V = -4.5 V, I = -9.5 A 0.0068 0.0085 GS D 0.0085 0.0106 a V = -2.5 V, I = -8.5 A Drain-Source On-State Resistance r GS D DSDS((on)on) 0.0112 0.014 V = -1.8 V, I = -7.5 A GS D a Forward Transconductance g V = -15 V, I = -9.5 A 45 S fs DS D a Diode Forward Voltage V I = -1.3 A, V = 0 V -0.58 -1.1 V SD S GS b Dynamic Total Gate Charge Q 74 110 g Gate-Source Charge Q V = -6 V, V = -5 V, I = -9.5 A 9.0 nC gs DS GS D Gate-Drain Charge Q 19 gd Gate Resistance R 3.6 g Turn-On Delay Time t 50 75 d(on) Rise Time t 75 110 r VV = = --66 VV,, R R = 6 = 6 DDDD LL I -1 A, V = -4.5 V, R = 6 D GEN G Turn-Off Delay Time t 270 400 d(off) ns Fall Time t 200 300 f Source-Drain Reverse Recovery Time t I = -1.3 A, di/dt = 100 A/ s 160 250 rr F Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 30 30 V = 5 thru 2 V GS 24 24 1.5 V 18 18 12 12 T = 125 C C 6 6 25 C -55 C 0 0 0 1234 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Document Number: 72257 www.vishay.com S-31419Rev. A, 07-Jul-03 2 I - Drain Current (A) D I - Drain Current (A) D