X-On Electronics has gained recognition as a prominent supplier of SI6415DQ-T1-E3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI6415DQ-T1-E3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI6415DQ-T1-E3

SI6415DQ-T1-E3 electronic component of Vishay
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See Product Specifications
Part No.SI6415DQ-T1-E3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET RECOMMENDED ALT 781-SI6415DQ
Datasheet: SI6415DQ-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7798 ea
Line Total: USD 1.78

Availability - 3104
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2828 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 2.4482
10 : USD 1.9604
100 : USD 1.4449
500 : USD 1.2594
1000 : USD 1.1456
5000 : USD 1.0644

3104 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 1.725
10 : USD 1.4605
100 : USD 1.2075
250 : USD 1.1615
500 : USD 1.0304
1000 : USD 0.9085
3000 : USD 0.8774
6000 : USD 0.8625
9000 : USD 0.8441

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Si6415DQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) DS DS(on) D Pb-free TrenchFET Power MOSFETs 0.019 at V = - 10 V 6.5 GS Available - 30 0.030 at V = - 4.5 V 5.2 GS RoHS* COMPLIANT S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 D D 1 8 must be tied common. S S 2 7 Si6415DQ S S 3 6 G D 4 5 Top View D Ordering Information: Si6415DQ-T1 Si6415DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS T = 25 C 6.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 5.2 A A I Pulsed Drain Current 30 DM a I - 1.5 Continuous Source Current (Diode Conduction) S T = 25 C 1.5 A a P W Maximum Power Dissipation D T = 70 C 1.0 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol LimitUnit a R 83 C/W Maximum Junction-to-Ambient thJA Notes: a. Surface Mounted on FR4 board, t 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70639 www.vishay.com S-80682-Rev. C, 31-Mar-08 1Si6415DQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 25 DS GS J a I V = - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 6.5 A 0.015 0.019 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 5.2 A 0.022 0.030 GS D a g V = - 15 V, I = - 6.5 A 18.5 S Forward Transconductance fs DS D a V I = - 1.5 A, V = 0 V - 0.75 - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 47 70 g Q V = - 15 V, V = - 10 V, I = - 6.5 A Gate-Source Charge 9.5 nC gs DS GS D Gate-Drain Charge Q 8 gd t Turn-On Delay Time 16 30 d(on) Rise Time t 17 30 V = - 15 V, R = 15 r DD L I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN G 73 110 ns d(off) Fall Time t 31 60 f t I = - 1.5 A, di/dt = 100 A/s Source-Drain Reverse Recovery Time 40 60 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70639 2 S-80682-Rev. C, 31-Mar-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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