Si7116DN Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET 0.0078 at V = 10 V RoHS 16.4 GS 40 15 nC New Low Thermal Resistance PowerPAK COMPLIANT 0.010 at V = 4.5 V 14.5 GS Package with Low 1.07 mm Profile PWM Optimized 100 % R Tested g PowerPAK 1212-8 APPLICATIONS Synchronous Rectification Intermediate Switch S 3.30 mm 3.30 mm 1 S Synchronous Buck 2 S 3 D G 4 D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7116DN-T1-E3 (Lead (Pb)-free) Si7116DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 40 DS V V Gate-Source Voltage 20 GS T = 25 C 16.4 10.5 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 13.1 8.4 A I Pulsed Drain Current 60 DM A a I 3.2 1.3 Continuous Source Current (Diode Conduction) S I Avalanche Current 15 AS L = 0 1 mH Avalanche Energy E 11 mJ AS T = 25 C 3.8 1.5 A a P W Maximum Power Dissipation D T = 70 C 2.0 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 24 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7116DN Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.5 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 16.4 A 0.0065 0.0078 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 14.5 A 0.0083 0.010 GS D a g V = 15 V, I = 16.4 A 68 S Forward Transconductance fs DS D a V I = 3.2 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 15 23 g Q V = 20 V, V = 4.5 V, I = 16.4 A Gate-Source Charge 6.7 nC gs DS GS D Gate-Drain Charge Q 5.1 gd R Gate Resistance f = 1 MHz 0.7 1.4 2.1 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 20 V, R = 20 10 15 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 36 55 ns D GEN g d(off) t Fall Time 10 15 f Source-Drain Reverse Recovery Time t I = 3.2 A, di/dt = 100 A/s 30 60 rr F Q I = 3.2 A, di/dt = 100 A/s Body Diode Reverse Recovery Charge 26 52 nc rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 thru 4 V GS 50 50 40 40 30 30 20 20 T = 125 C C 10 10 25 C 3 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73139 2 S-80581-Rev. D, 17-Mar-08 I - Drain Current (A) D I - Drain Current (A) D