X-On Electronics has gained recognition as a prominent supplier of SI7145DP-T1-GE3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI7145DP-T1-GE3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI7145DP-T1-GE3 Vishay

SI7145DP-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI7145DP-T1-GE3
Manufacturer: Vishay
Category: MOSFET
Description: Vishay Semiconductors MOSFET -30V 2.6mOhm10V 60A P-Ch G-III
Datasheet: SI7145DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.725 ea
Line Total: USD 1.72

Availability - 106586
Ships to you between
Thu. 27 Jun to Mon. 01 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5191 - WHS 1


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 5
Multiples : 1
5 : USD 4.2822
50 : USD 3.7433
100 : USD 3.3631
500 : USD 3.0062
1500 : USD 2.7544

2026 - WHS 2


Ships to you between
Fri. 28 Jun to Wed. 03 Jul

MOQ : 1
Multiples : 1
1 : USD 2.4348
10 : USD 2.0871
30 : USD 1.8689
100 : USD 1.6451
500 : USD 1.5437
1000 : USD 1.5005

106586 - WHS 3


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 1
Multiples : 1
1 : USD 1.725
10 : USD 1.518
100 : USD 1.334
250 : USD 1.288
500 : USD 1.2075
1000 : USD 1.1063
3000 : USD 1.1063
6000 : USD 1.0867
9000 : USD 1.0637

600 - WHS 4


Ships to you between Fri. 21 Jun to Thu. 27 Jun

MOQ : 6
Multiples : 1
6 : USD 1.7211
10 : USD 1.585
25 : USD 1.5756
100 : USD 1.4145
250 : USD 1.385
500 : USD 1.2913

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif
 
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We are delighted to provide the SI7145DP-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7145DP-T1-GE3 and other electronic components in the MOSFET category and beyond.

New Product Si7145DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition d 0.0026 at V = - 10 V - 60 TrenchFET Power MOSFET GS - 30 129 nC 100 % R Tested d g 0.00375 at V = - 4.5 V - 60 GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 S APPLICATIONS S 6.15 mm 5.15 mm Adaptor Switch 1 S 2 - Notebook Computers S 3 G G 4 D 8 D 7 D 6 D 5 D Bottom View Ordering Information: Si7145DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage - 30 DS V V Gate-Source Voltage 20 GS d T = 25 C - 60 C d T = 70 C - 60 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 36.5 A a, b T = 70 C - 29.2 A A I - 100 Pulsed Drain Current DM d T = 25 C - 60 C Continuous Source-Drain Diode Current I S a, b T = 25 C - 5.6 A I Avalanche Current - 50 AS L = 0.1 mH E Single-Pulse Avalanche Energy 125 mJ AS T = 25 C 104 C T = 70 C 66.6 C P Maximum Power Dissipation W D a, b T = 25 C 6.25 A a, b T = 70 C 4.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C e, f 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 15 20 thJA C/W R Maximum Junction-to-Case Steady State 0.9 1.2 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 54 C/W. d. Package limited. e. See Solder Profile (www.vishay.com/doc 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 64814 www.vishay.com S09-0872-Rev. A, 18-May-09 1New Product Si7145DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 18 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.1 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 2.3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 40 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 25 A 0.0021 0.0026 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 20 A 0.0030 0.00375 GS D a g V = - 10 V, I = - 25 A 110 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 15 660 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 1335 pF oss DS GS C Reverse Transfer Capacitance 1570 rss V = - 15 V, V = - 10 V, I = - 20 A 275 413 DS GS D Q Total Gate Charge g 129 194 nC Q V = - 15 V, V = - 4.5 V, I = - 20 A Gate-Source Charge 37 gs DS GS D Q Gate-Drain Charge 40 gd R Gate Resistance f = 1 MHz 0.4 1.6 3.2 g t Turn-On Delay Time 27 50 d(on) t V = - 15 V, R = 1.5 Rise Time 13 26 r DD L t I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime 130 220 d(off) D GEN g t Fall Time 27 50 f ns t Turn-On Delay Time 125 210 d(on) t V = - 15 V, R = 1.5 Rise Time 110 190 r DD L t I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 107 180 d(off) D GEN g t Fall Time 43 80 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 60 S C A Pulse Diode Forward Current I - 100 SM Body Diode Voltage V I = - 5 A, V = 0 V - 0.69 - 1.1 V SD S GS Body Diode Reverse Recovery Time t 42 80 ns rr Body Diode Reverse Recovery Charge Q 44 84 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 20 a ns Reverse Recovery Rise Time t 22 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 64814 2 S09-0872-Rev. A, 18-May-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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