SI7192DP-T1-GE3 Vishay

SI7192DP-T1-GE3 electronic component of Vishay
SI7192DP-T1-GE3 Vishay
SI7192DP-T1-GE3 MOSFETs
SI7192DP-T1-GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI7192DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7192DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI7192DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 60A 104W 1.9mohm @ 10V
Datasheet: SI7192DP-T1-GE3 Datasheet (PDF)
Price (USD)
130: USD 2.0098 ea
Line Total: USD 261.27 
Availability : 2813
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
130$ 2.0098
137$ 1.9058
137$ 1.9045
137$ 1.9032
250$ 1.8288
1000$ 1.8275

Availability 2813
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 130
Multiples : 1
QtyUnit Price
130$ 2.0098
137$ 1.9058
137$ 1.9045
137$ 1.9032
250$ 1.8288
1000$ 1.8275

   
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RoHS - XON
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Continuous Drain Current
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI7192DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7192DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI7192DP-T1-GE3 is a 30V N-Channel MOSFET featuring a maximum continuous drain-source voltage of 30V, a maximum continuous drain current of 60A, a maximum power dissipation of 104W, and a drain-source resistance of 1.9mohm at 10V. This device is designed for use as a general purpose switch and is suitable for a wide variety of electrical applications, including power management, voltage regulation, and lighting control. It is RoHS compliant and is rated for operation up to 105°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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