Si7308DN Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.058 at V = 10 V 6 GS TrenchFET Power MOSFET 60 13 nC 0.072 at V = 4.5 V 6 GS Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile PowerPAK 1212-8 APPLICATIONS CCFL Inverter S 3.30 mm 3.30 mm 1 D S Class-D Amp 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7308DN-T1-E3 (Lead (Pb)-free) Si7308DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 60 DS V Gate-Source Voltage V 20 GS a T = 25 C C 6 a T = 70 C C 6 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 5.4 b, c T = 70 C A 4.3 A Pulsed Drain Current (10 s Width) I 20 DM a T = 25 C C 6 I Continuous Source-Drain Diode Current S b, c T = 25 C A 2.7 I Avalanche Current 11 AS L = 0.1 mH E Single-Pulse Avalanche Energy 6.1 mJ AS T = 25 C 19.8 C T = 70 C 12.7 C P Maximum Power Dissipation W D b, c T = 25 C A 3.2 b, c T = 70 C A 2.1 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R 31 39 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 56.3 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 C/W. Document Number: 73419 www.vishay.com S-83051-Rev. B, 29-Dec-08 1Si7308DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 60 V DS GS D V Temperature Coefficient V /T 55 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 60 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 60 V, V = 0 V, T = 85 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 5.4 A 0.046 0.058 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 4.8 A 0.059 0.072 GS D a g V = 15 V, I = 5.4 A 15 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 665 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 75 pF oss DS GS C Reverse Transfer Capacitance 40 rss V = 30 V, V = 10 V, I = 5.4 A 13 20 DS GS D Q Total Gate Charge g 69 nC Q Gate-Source Charge V = 30 V, V = 4.5 V, I = 5.4 A 2.3 gs DS GS D Q Gate-Drain Charge 2.6 gd R Gate Resistance f = 1 MHz 2 g t Turn-On Delay Time 15 25 d(on) t Rise Time V = 30 V, R = 7 65 100 r DD L I 4.3 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 15 25 d(off) Fall Time t 10 15 f ns t Turn-On Delay Time 10 15 d(on) Rise Time t 15 25 V = 30 V, R = 7 r DD L I 4.3 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 20 30 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 6 S C A I Pulse Diode Forward Current 20 SM V I = 1.7 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Q Body Diode Reverse Recovery Charge 32 50 nC rr I = 4.3 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 25 a ns t Reverse Recovery Rise Time 5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73419 2 S-83051-Rev. B, 29-Dec-08