New Product Si7634BDP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS g 0.0054 at V = 10 V GS 40 COMPLIANT 100 % R Tested 30 21.5 nC g g 0.007 at V = 4.5 V GS 40 100 % Avalanche Tested PowerPAK SO-8 APPLICATIONS Notebook PC Core S - Low Side 6.15 mm 5.15 mm 1 D S - High Side 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7634BDP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7634BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS g T = 25 C C 40 g T = 70 C C 40 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 22.5 b, c T = 70 C A 18.0 A I Pulsed Drain Current 70 DM g T = 25 C C 40 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.5 I Single Pulse Avalanche Current 30 AS L = 0.1 mH Single Pulse Avalanche Energy E 45 mJ AS T = 25 C 48 C T = 70 C 31 C Maximum Power Dissipation P W D b, c T = 25 C 5.0 A b, c T = 70 C A 3.2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 thJA Maximum Junction-to-Ambient C/W R Maximum Junction-to-Case (Drain) Steady State 2.1 2.6 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7634BDP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V Temperature Coefficient V /T 33 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 1.4 2.6 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0045 0.0054 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0058 0.007 GS D a g V = 15 V, I = 15 A 78 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3150 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 420 pF oss DS GS C Reverse Transfer Capacitance 166 rss V = 15 V, V = 10 V, I = 10 A 45.5 68 DS GS D Q Total Gate Charge g 21.5 33 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 8 gs DS GS D Q Gate-Drain Charge 6.2 gd R Gate Resistance f = 1 MHz 0.8 1.6 g t Turn-On Delay Time 12 24 d(on) t Rise Time V = 15 V, R = 1.5 10 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 34 55 d(off) Fall Time t 816 f ns t Turn-On Delay Time 30 50 d(on) Rise Time t 12 24 V = 15 V, R = 1.5 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 34 55 d(off) Fall Time t 12 24 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 40 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.75 1.1 V SD S t Body Diode Reverse Recovery Time 30 60 ns rr Body Diode Reverse Recovery Charge Q 35 70 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 20 a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74031 2 S-80439-Rev. C, 03-Mar-08