6.15 mm Si7850DP www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) Fast Switching MOSFET FEATURES PowerPAK SO-8 Single D TrenchFET power MOSFETs D 8 D 7 New low thermal resistance PowerPAK D 6 package with low 1.07 mm profile 5 PWM optimized for fast switching 100 % R tested g Available Material categorization: for definitions of 1 2 S compliance please see www.vishay.com/doc 99912 3 S 4 S 1 APPLICATIONS G Top View Bottom View Primary side switch for 24 V DC/DC applications Secondary synchronous rectifier PRODUCT SUMMARY D V (V) 60 DS R max. ( ) at V = 10 V 0.022 DS(on) GS R max. ( ) at V = 4.5 V 0.031 DS(on) GS G Q typ. (nC) 18 g I (A) 10.3 D Configuration Single S N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8 Lead (Pb)-free Si7850DP-T1-E3 Lead (Pb)-free and halogen-free Si7850DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 10 s STEADY STATE UNIT Drain-source voltage V 60 60 DS V Gate-source voltage V 20 20 GS T = 25 C 10.3 6.2 A a Continuous drain current (T = 150 C) I J D T = 85 C 7.5 4.5 A Continuous source current I 3.7 1.5 A S Pulsed drain current I 40 40 DM b Avalanche current I 15 15 AS b Single avalanche energy E 11 11 mJ AS T = 25 C 4.5 1.8 A a Maximum power dissipation P W D T = 85 C 2.3 0.9 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 10 s 22 28 a Maximum junction-to-ambient R thJA Steady state 58 70 C/W Maximum junction-to-case (drain) Steady state R 2.6 3.3 thJC Notes a. Surface mounted on 1 x 1 FR4 board b. Guaranteed by design, not subject to production testing S09-0227-Rev. E, 09-Feb-09 Document Number: 71625 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 5.15 mm Si7850DP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - (BR)DSS GS D V Gate threshold voltage V V = V , I = 250 A 1 - 3 GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 60 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 60 V, V = 0 V, T = 55 C - - 20 DS GS J a On-state drain current I V 5 V, V = 10 V 40 - - A D(on) DS GS V = 10 V, I = 10.3 A - 0.018 0.022 GS D a Drain-source on-state resistance R DS(on) V = 4.5 V, I = 8.7 A - 0.025 0.031 GS D a Forward transconductance g V = 15 V, I = 10.3 A - 26 - S fs DS D a Diode forward voltage V I = 3.8 A, V = 0 V - 0.85 1.2 V SD S GS b Dynamic Total gate charge Q -18 27 g Gate-source charge Q V = 30 V, V = 10 V, I = 10.3 A -3.4 - nC gs DS GS D Gate-drain charge Q -5.3 - gd Gate resistance R 0.5 1.4 2.2 g Turn-on delay time t -10 20 d(on) Rise time t -10 20 r V = 30 V, R = 30 DD L I 1 A, V = 10 V, R = 6 Turn-off delay time t D GEN g -25 50 ns d(off) Fall time t -12 24 f Source-drain reverse recovery time t I = 3.8 A, di/dt = 100 A/s - 50 80 rr F Notes a. Pulse test: pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-0227-Rev. E, 09-Feb-09 Document Number: 71625 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000