Si7860ADP Vishay Siliconix N-Channel Reduced Q , Fast Switching MOSFET g FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.0095 at V = 10 V 16 GS TrenchFET Power MOSFET 30 PWM Optimized for High Efficiency 0.0125 at V = 4.5 V 16 GS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R Tested g PowerP AK SO-8 APPLICATIONS Buck Converter S - High Side or Low Side 6.15 mm 5.15 mm 1 S Synchronous Rectifier 2 S - Secondary Rectifier 3 G D 4 D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7860ADP-T1-E3 (Lead (Pb)-free) Si7860ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 16 11 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 13 8 A Pulsed Drain Current I 50 A DM a I 4.1 1.5 Continuous Source Current (Diode Conduction) S I 35 Avalanche Current AS L = 0.1 mH Single Pulse Avalanche Energy E 60 mJ AS T = 25 C 4.8 1.8 A a P W Maximum Power Dissipation D T = 70 C 3.1 1.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 21 26 a R Maximum Junction-to-Ambient (MOSFET) thJA Steady State 56 70 C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.5 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7860ADP Vishay Siliconix MOSFET SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 70 C 5 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 16 A 0.0079 0.0095 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 14 A 0.0105 0.0125 GS D a g V = 15 V, I = 16 A 60 S Forward Transconductance fs DS D a V I = 3 A, V = 0 V 0.70 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 13 18 g Q V = 15 V, V = 4.5 V, I = 16 A Gate-Source Charge 5 nC gs DS GS D Gate-Drain Charge Q 4.0 gd R Gate Resistance 0.5 1.7 3.2 g Turn-On Delay Time t 18 27 d(on) t Rise Time V = 15 V, R = 15 12 18 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 46 70 ns D GEN g d(off) t Fall Time 19 30 f I = 3 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time t 40 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 thru 4 V GS 40 40 30 30 20 20 T = 125 C 3 V C 10 10 25 C - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 012345 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72651 2 S09-0272-Rev. D, 16-Feb-09 I - Drain Current (A) D I - Drain Current (A) D