Si7852ADP Vishay Siliconix N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.017 at V = 10 V 30 GS TrenchFET Power MOSFET 80 30.5 0.021 at V = 8 V 30 GS 100 % R Tested g 100 % UIS Tested PowerPAK SO-8 APPLICATIONS S 6.15 mm 5.15 mm D 1 Primary Side Switch S 2 S 3 G 4 D 8 G D 7 D 6 D 5 Bottom View S Ordering Information: Si7852ADP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7852ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 80 DS V V Gate-Source Voltage 20 GS a T = 25 C C 30 a T = 70 C C 30 Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 12 A b, c T = 70 C 9.7 A A I Pulsed Drain Current 60 DM a T = 25 C C 30 I Continuous Source-Drain Diode Current S b, c T = 25 C 4.5 A Avalanche Current I 30 AS L = 0.1 mH Single Pulse Avalanche Energy E 45 mJ AS T = 25 C 62.5 C T = 70 C 40 C P Maximum Power Dissipation W D b, c T = 25 C 5 A b, c T = 70 C 3.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 20 25 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.6 2.0 thJC Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 65 C/W. Document Number: 73988 www.vishay.com S09-0223-Rev. C, 09-Feb-09 1 Si7852ADP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 80 V DS GS D V Temperature Coefficient V /T 86 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 9.3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 2.5 4.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 80 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.014 0.017 GS D a R Drain-Source On-State Resistance DS(on) V = 8 V, I = 8 A 0.016 0.021 GS D a g V = 15 V, I = 10 A 25 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1825 iss Output Capacitance C V = 40 V, V = 0 V, f = 1 MHz 220 pF oss DS GS C Reverse Transfer Capacitance 75 rss Q Total Gate Charge 30.5 45 g Q V = 40 V, V = 10 V, I = 10 A Gate-Source Charge 9 nC gs DS GS D Q Gate-Drain Charge 8 gd R Gate Resistance f = 1 MHz 0.14 0.7 1.4 g t Turn-On Delay Time 12 24 d(on) t Rise Time V = 40 V, R = 4 918 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 20 40 d(off) Fall Time t 816 f ns t Turn-On Delay Time 16 30 d(on) Rise Time t 918 V = 40 V, R = 4 r DD L I 10 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 26 50 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 30 S C A a I 60 Pulse Diode Forward Current SM Body Diode Voltage V I = 3 A 0.77 1.1 V SD S t Body Diode Reverse Recovery Time 46 80 ns rr Body Diode Reverse Recovery Charge Q 95 160 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 35 a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73988 2 S09-0223-Rev. C, 09-Feb-09