SI7892BDP-T1-E3 Vishay

SI7892BDP-T1-E3 electronic component of Vishay
SI7892BDP-T1-E3 Vishay
SI7892BDP-T1-E3 MOSFETs
SI7892BDP-T1-E3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI7892BDP-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7892BDP-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI7892BDP-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 25A 0.0042Ohm
Datasheet: SI7892BDP-T1-E3 Datasheet (PDF)
Price (USD)
1: USD 2.6 ea
Line Total: USD 2.6 
Availability : 15087
  
Ship by Thu. 07 Aug to Mon. 11 Aug
QtyUnit Price
1$ 2.6
10$ 1.812
100$ 1.485
500$ 1.353
1000$ 1.188
3000$ 1.122

Availability 15087
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.6
10$ 1.812
100$ 1.485
500$ 1.353
1000$ 1.188
3000$ 1.122

   
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RoHS - XON
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We are delighted to provide the SI7892BDP-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7892BDP-T1-E3 and other electronic components in the MOSFETs category and beyond.

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The SI7892BDP-T1-E3 is a MOSFET that is manufactured by Vishay. It is a 30V, 25A device with an extremely low on-resistance of 0.0042 ohms making it ideal for high-power applications where heat dissipation can be a challenge. This device features fast switching speed and low gate charge for improved power delivery and efficiency. Additionally, this MOSFET is equipped with Low rDS(on) to minimize conduction losses, allowing for maximum power density. Furthermore, this device has an industry-leading packaging option which drives down board space requirements.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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