New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.0055 at V = - 10 V - 60 TrenchFET Power MOSFET GS - 30 51 nC PWM Optimized 0.0078 at V = - 4.5 V - 60 GS 100 % R Tested g PowerPAK SO-8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S1 APPLICATIONS 6.15 mm 5.15 mm 1 S S 1 2 G1 Battery and Load Switching 2 S2 for Notebook PCs 3 G2 4 G G 1 2 D1 8 D1 7 D2 6 D2 5 Bottom View D D 1 2 P-Channel MOSFET P-Channel MOSFET Ordering Information: Si7997DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS a T = 25 C - 60 C a T = 70 C - 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 20.8 A b, c T = 70 C - 16.6 A A Pulsed Drain Current I - 100 DM T = 25 C - 38 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.9 A Single Pulse Avalanche Current I - 30 AS L = 0.1 mH Single Pulse Avalanche Energy E 45 mJ AS T = 25 C 46 C T = 70 C 29 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 26 35 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.2 2.7 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 85 C/W. Document Number: 66719 www.vishay.com S10-1826-Rev. A, 09-Aug-10 1New Product Si7997DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 23 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 2.2 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V - 10 V, I = - 20 A 0.0045 0.0055 GS D a R Drain-Source On-State Resistance DS(on) V - 4.5 V, I = - 20 A 0.0063 0.0078 GS D a g V = - 15 V, I = - 20 A 71 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 6200 iss Output Capacitance C V = - 15 V, V = 0 V, f = 1 MHz 615 pF oss DS GS C Reverse Transfer Capacitance 560 rss V = - 15 V, V = - 10 V, I = - 20 A 106 160 DS GS D Total Gate Charge Q g 51 77 nC Q V = - 15 V, V = - 4.5 V, I = - 20 A Gate-Source Charge 17 gs DS GS D Gate-Drain Charge Q 16.5 gd R Gate Resistance f = 1 MHz 0.9 4.6 9.2 g t Turn-On Delay Time 60 90 d(on) t Rise Time 50 75 r V = - 15 V, R = 1.5 DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 80 120 d(off) Fall Time t 40 60 f ns t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 15 V, R = 1.5 10 15 r DD L I - 10 A, V = - 10 V, R = 1 Turn-Off Delay Time t D GEN g 115 175 d(off) t Fall Time 40 60 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 38 S C A a I - 100 Pulse Diode Forward Current SM Body Diode Voltage V I = - 10 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 35 55 ns rr Body Diode Reverse Recovery Charge Q 30 45 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns t Reverse Recovery Rise Time 20 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66719 2 S10-1826-Rev. A, 09-Aug-10