Si8401DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) r ( ) I (A) DS DS(on) D New MICRO FOOT Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and 0.065 V = 4.5 V GS 4.9 On-Resistance Per Footprint Area 2020 0.095 V = 2.5 V 4.1 Pin Compatible to Industry Standard Si3443DV GS APPLICATIONS PA, Battery and Load Switch Battery Charger Switch PA Switch MICRO FOOT S Bump Side View Backside View 32 G DD 8401 xxx Device Marking: 8401 xxx = Date/Lot Traceability Code S G D 41 P-Channel MOSFET Ordering Information: Si8401DB-T1 Si8401DB-T1E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage V 20 DS VV Gate-Source Voltage V GS 12 T = 25 C 3.6 4.9 A aa CContinuous Drain Currentontinuous Drain Current (T(T == 150 150 C)C) II JJ DD T = 70 C 3.9 2.8 A AA Pulsed Drain Current I 10 DM a continuous Source Current (Diode Conduction) I 2.5 2.5 S T = 25 C 2.77 1.47 A aa Maximum Power DissipationMaximum Power Dissipation PP WW DD T = 70 C 1.77 0.94 A Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg c VPR 215/245 bb Package Reflow ConditionsPackage Reflow Conditions CC c IR/Convection 220/250 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 sec 35 45 aa Maximum Junction-to-AmbientMi J ti t A bi t RR thJA Steady State 72 85 C/WC/W Maximum Junction-to-Foot (drain) Steady State R 16 20 thJF Notes a. Surface Mounted on 1 x 1 FR4 Board. b. Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. c. Package reflow conditions for lead-free. Document Number: 71674 www.vishay.com S-40384Rev. F, 01-Mar-04 1Si8401DB Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.45 0.9 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 20 V, V = 0 V, T = 70 C 5 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 5 A D(on) DS GS V = 4.5 V, I = 1 A 0.057 0.065 GS D aa DrainDrain-Source On-State ResistanceSource On State Resistance rr DSDS((on)) V = 2.5 V, I = 1 A 0.080 0.095 GS D a Forward Transconductance g 6 S fs V = 10 V, I = 1 A DS D a Diode Forward Voltage V I = 1 A, V = 0 V 0.73 1.1 V SD S GS b Dynamic Total Gate Charge Q 11 17 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 1 A 2.1 nC gs DS GS D Gate-Drain Charge Q 2.9 gd Turn-On Delay Time t 17 25 d(on) Rise Time t 28 45 r VV = = 10 V10 V,, R R = 10 = 10 DDDD LL I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t D GEN G 88 135 d(off) ns Fall Time t 60 90 f Source-Drain Reverse Recovery Time t I = A, di/dt = 100 A/ s rr F Notes a. Pulse test pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 10 10 V = 5 thru 2.5 V GS 8 8 2 V 6 6 4 4 T = 125 C C 2 2 1.5 V 25 C 55 C 0 0 0 2468 10 0.0 0.5 1.0 1.5 2.0 2.5 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Document Number: 71674 www.vishay.com S-40384Rev. F, 01-Mar-04 2 I Drain Current (A) D I Drain Current (A) D