1 mm Si8410DB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Ultra small 1 mm x 1 mm maximum outline 0.037 at V = 4.5 V 5.7 GS Ultra-thin 0.548 mm maximum height 0.041 at V = 2.5 V 5.4 GS 20 5.9 nC 0.047 at V = 1.8 V 5.0 Material categorization: GS for definitions of compliance please see 0.068 at V = 1.5 V 4.2 GS www.vishay.com/doc 99912 MICRO FOOT 1 x 1 APPLICATIONS S 2 S Load switch D 3 Power management High speed switching 1 G 4 G 1 D Backside View Bump Side View Marking Code: xxxx = 8410 S xxx = Date / lot traceability code N-Channel MOSFET Ordering Information: Si8410DB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 20 DS V Gate-Source Voltage V 8 GS a T = 25 C 5.7 A a T = 70 C 4.5 A Continuous Drain Current (T = 150 C) I J D c T = 25 C 3.8 A c T = 70 C 3.0 A A Pulsed Drain Current (t = 100 s) I 20 DM a T = 25 C 1.5 C Continuous Source-Drain Diode Current I S c T = 25 C 0.65 A a T = 25 C 1.8 A a T = 70 C 1.1 A Maximum Power Dissipation P W D c T = 25 C 0.78 A c T = 70 C 0.5 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg VPR 260 C e Package Reflow Conditions IR/Convection 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a, b Maximum Junction-to-Ambient t = 10 s 55 70 R C/W thJA c, d Maximum Junction-to-Ambient t = 10 s 125 160 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 10 s, T = 25 C. A b. Maximum under steady state conditions is 100 C/W. c. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 10 s. d. Maximum under steady state conditions is 190 C/W. e. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. f. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. S15-1510-Rev. B, 29-Jun-15 Document Number: 62961 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxxx xxx 1 mmSi8410DB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 - - V DS GS D V Temperature Coefficient V /T -17- DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --2.6 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 - 0.85 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = 20 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 70 C - - 10 DS GS J a On-State Drain Current I V -5 V, V = 4.5 V 10 - - A D(on) DS GS V = 4.5 V, I = 1.5 A - 0.030 0.037 GS D V = 2.5 V, I = 1 A - 0.033 0.041 GS D a Drain-Source On-State Resistance R DS(on) V = 1.8 V, I = 1 A - 0.038 0.047 GS D V = 1.5 V, I = 0.5 A - 0.044 0.068 GS D a Forward Transconductance g V = 10 V, I = 1.5 A - 17 - S fs DS D b Dynamic Input Capacitance C - 620 - iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz - 110 - pF oss DS GS Reverse Transfer Capacitance C -40- rss V = 10 V, V = 8 V, I = 1.5 A - 10.4 16 DS GS D Total Gate Charge Q g -5.9 9 nC Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 1.5 A -0.7 - gs DS GS D Gate-Drain Charge Q -0.66- gd Gate Resistance R V = 0.1 V, f = 1 MHz - 5.3 - g GS Turn-On Delay Time t -5 10 d(on) Rise Time t -25 50 r V = -10 V, R = 6.7 DD L I 1.5 A, V = -4.5 V, R = 1 Turn-Off Delay Time t D GEN g -26 50 d(off) Fall Time t -10 20 f ns Turn-On Delay Time t -5 10 d(on) Rise Time t -22 45 r V = -10 V, R = 6.7 DD L I -1.5 A, V = -8 V, R = 1 Turn-Off Delay Time t -2D GEN g 345 d(off) Fall Time t -10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode I T = 25 C - - 1.5 S A Current A Pulse Diode Forward Current I -- 20 SM Body Diode Voltage V I = 1.5 A, V = 0 - 0.7 1.2 V SD S GS Body Diode Reverse Recovery Time t -15 30 ns rr Body Diode Reverse Recovery Charge Q -6 15 nC rr I = 1.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -8.5 - a ns -6.5 - Reverse Recovery Rise Time t b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1510-Rev. B, 29-Jun-15 Document Number: 62961 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000