1.6 mm Si8457DB www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET p-channel Gen III and MICRO FOOT a, e V (V) R ( ) MAX. I (A) Q (TYP.) DS DS(on) D g power MOSFET technology provide extremely 0.0190 at V = -4.5 V -10.2 GS low on-resistance per outline area -12 0.0234 at V = -2.5 V -9.2 37 nC GS Ultra-small 1.6 mm x 1.6 mm maximum outline 0.0350 at V = -1.8 V -7.5 GS Ultra-thin 0.6 mm maximum height Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 MICRO FOOT 1.6 x 1.6 D 2 D APPLICATIONS S 3 Power management 1 G G 4 1 S Backside View Bump Side View Marking Code: 8457 D Ordering Information: Si8457DB-T1-E1 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -12 DS V Gate-Source Voltage V 8 GS a T = 25 C -10.2 A a T = 70 C -8.2 A Continuous Drain Current (T = 150 C) I J D b T = 25 C -6.5 A b T = 70 C -5.2 A A Pulsed Drain Current (t = 100 s) I -25 DM a T = 25 C -2.3 A Continuous Source-Drain Diode Current I S b T = 25 C -0.92 A a T = 25 C 2.7 A a T = 70 C 1.8 A Maximum Power Dissipation P W D b T = 25 C 1.1 A b T = 70 C 0.73 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg V 260 C PR c Package Reflow Conditions IR / convection 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. c. Refer to IPC / JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A S15-1692-Rev. B, 20-Jul-15 Document Number: 64267 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 8457 xxx 1.6 mmSi8457DB www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a,b Maximum Junction-to-Ambient t = 5 s R 35 45 thJA C/W c,d Maximum Junction-to-Ambient t = 5 s R 85 110 thJA Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Maximum under steady state conditions is 85 C/W. c. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. d. Maximum under steady state conditions is 175 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -12 - - V DS GS D V Temperature Coefficient V /T --5- DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -1.8 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.4 - -0.9 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V - - 100 nA GSS DS GS V = -12 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -12 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -5 - - A D(on) DS GS V = -4.5 V, I = -3 A - 0.0150 0.0190 GS D a Drain-Source On-State Resistance R V = -2.5 V, I = -3 A - 0.0190 0.0234 DS(on) GS D V = -1.8 V, I = -1 A - 0.0280 0.0350 GS D a g Forward Transconductance V = -6 V, I = -3 A - 26 - S fs DS D b Dynamic Input Capacitance C - 2900 - iss Output Capacitance C V = -6 V, V = 0 V, f = 1 MHz - 715 - pF oss DS GS Reverse Transfer Capacitance C - 620 - rss V = -6 V, V = -8 V, I = -3 A - 62 93 DS GS D Total Gate Charge Q g -37 56 nC Q Gate-Source Charge gs V = -6 V, V = -4.5 V, I = -3 A -4.2 - DS GS D Q Gate-Drain Charge gd -10- R Gate Resistance g V = -0.1 V, f = 1 MHz - 16 - GS Turn-On Delay Time t -27 50 d(on) Rise Time t V = -6 V, R = 2 - 60 120 r DD L I -3 A, V = -4.5 V, R = 1 Turn-Off Delay Time t -D GEN g300600 d(off) Fall Time t - 210 420 f ns Turn-On Delay Time t -7 15 d(on) Rise Time t -13 25 V = -6 V, R = 2 r DD L I -3 A, V = -8 V, R = 1 Turn-Off Delay Time t -400800 D GEN g d(off) Fall Time t - 215 430 f Drain-Source Body Diode Characteristics c Continuous Source-Drain Diode Current I T = 25 C - - -2.3 S A A Pulse Diode Forward Current I -- -25 SM Body Diode Voltage V I = -3 A, V = 0 V - -0.72 -1.2 V SD S GS Body Diode Reverse Recovery Time t - 240 480 ns rr Body Diode Reverse Recovery Charge Q - 640 1280 nC rr I = -3 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -93- a ns Reverse Recovery Rise Time t - 147 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1692-Rev. B, 20-Jul-15 Document Number: 64267 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000