0.8 mm Si8824EDB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Ultra small 0.8 mm x 0.8 mm outline 0.075 at V = 4.5 V 2.9 GS Ultra thin 0.357 mm height 0.082 at V = 2.5 V 2.7 GS Typical ESD protection 2000 V (HBM) 20 0.090 at V = 1.8 V 2.6 2.7 nC GS Material categorization: for definitions of 0.125 at V = 1.5 V 2.2 GS compliance please see www.vishay.com/doc 99912 0.175 at V = 1.2 V 1.5 GS APPLICATIONS D Ultraportable and wearable devices MICRO FOOT 0.8 x 0.8 S Load switch with low voltage drop 22 SS Load switch for 1.2 V, 1.5 V, and 1.8 V 33 power lines G Small signal and high speed switching 11 GG 44 1 D Backside View Bump Side View S Marking Code: AM N-Channel MOSFET Ordering Information: Si8824EDB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 20 DS V Gate-Source Voltage V 5 GS a T = 25 C 2.9 A a T = 70 C 2.3 A Continuous Drain Current (T = 150 C) I J D b T = 25 C 2.1 A b T = 70 C 1.7 A A Pulsed Drain Current (t = 100 s) I 15 DM a T = 25 C 0.7 A Continuous Source-Drain Diode Current I S b T = 25 C 0.4 A a T = 25 C 0.9 A a T = 70 C 0.6 A Maximum Power Dissipation P W D b T = 25 C 0.5 A b T = 70 C 0.3 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C c Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a, d Maximum Junction-to-Ambient 105 135 t 5 s R C / W thJA b, e Maximum Junction-to-Ambient 200 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. c. Refer to IPC / JEDEC (J-STD-020), no manual or hand soldering. d. Maximum under steady state conditions is 185 C / W. e. Maximum under steady state conditions is 330 C / W. S15-0338-Rev. A, 23-Feb-15 Document Number: 62978 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxx xx 0.8 mmSi8824EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 - - V DS GS D V Temperature Coefficient V / T -13 - DS DS J I = 250 A mV / C D V Temperature Coefficient V / T --2 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.35 - 0.8 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 5 V - - 2 GSS DS GS V = 20 V, V = 0 V - - 1 A DS GS Zero Gate Voltage Drain Current I DSS V = 20 V, V = 0 V, T = 55 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 10 - - A D(on) DS GS V = 4.5 V, I = 1 A - 0.060 0.075 GS D V = 2.5 V, I = 1 A - 0.065 0.082 GS D a Drain-Source On-State Resistance R V = 1.8 V, I = 0.5 A - 0.070 0.090 DS(on) GS D V = 1.5 V, I = 0.5 A - 0.080 0.125 GS D V = 1.2 V, I = 0.1 A - 0.090 0.175 GS D a Forward Transconductance g V = 10 V, I = 1 A - 11 - S fs DS D b Dynamic Input Capacitance C - 400 - iss Output Capacitance C -6V = 10 V, V = 0 V, f = 1 MHz0- pF oss DS GS Reverse Transfer Capacitance C -35- rss Total Gate Charge Q -2.7 6 g Gate-Source Charge Q -0V = 10 V, V = 4.5 V, I = 1 A.46- nC gs DS GS D Gate-Drain Charge Q -0.93- gd Gate Resistance R f = 1 MHz - 3 - g Turn-On Delay Time t -5 10 d(on) Rise Time t -2040 r V = 10 V, R = 10 DD L ns I 1 A, V = 4.5 V, R = 1 Turn-Off Delay Time t -1D GEN g 735 d(off) Fall Time t -10 20 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 0.7 S C A Pulse Diode Forward Current I -- 15 SM Body Diode Voltage V I = 1 A, V = 0 V - 0.7 1.2 V SD S GS Body Diode Reverse Recovery Time t -11 20 ns rr Body Diode Reverse Recovery Charge Q -5 10 nC rr I = 1 A, dI / dt = 100 A / s, T = 25 C F J Reverse Recovery Fall Time t -7 - a ns Reverse Recovery Rise Time t -4 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0338-Rev. A, 23-Feb-15 Document Number: 62978 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000