X-On Electronics has gained recognition as a prominent supplier of SI9435BDY-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI9435BDY-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI9435BDY-E3 Vishay

SI9435BDY-E3 electronic component of Vishay
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Part No.SI9435BDY-E3
Manufacturer: Vishay
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Datasheet: SI9435BDY-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 0.602 ea
Line Total: USD 1.81 
Availability - 2069
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
2069
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3
Multiples : 1
3 : USD 0.602
10 : USD 0.5712
38 : USD 0.4634
104 : USD 0.4382
2500 : USD 0.4354

   
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Drain Current
Drain-Source Voltage
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
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We are delighted to provide the SI9435BDY-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI9435BDY-E3 and other electronic components in the MOSFETs category and beyond.

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Si9435BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.042 at V = - 10 V - 5.7 GS TrenchFET Power MOSFET - 30 0.055 at V = - 6 V - 5.0 GS Compliant to RoHS Directive 2002/95/EC 0.070 at V = - 4.5 V - 4.4 GS SO-8 S SD 1 8 S D 2 7 G SD3 6 G D 4 5 Top View D Ordering Information: Si9435BDY-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si9435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sSteady State Unit V Drain-Source Voltage - 30 DS V Gate-Source Voltage V 20 GS T = 25 C - 5.7 - 4.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.6 - 3.2 A A I Pulsed Drain Current - 30 DM a I - 2.3 - 1.1 Continuous Source Current (Diode Conduction) S T = 25 C 2.5 1.3 A a P W Maximum Power Dissipation D T = 70 C 1.6 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 40 50 a R Maximum Junction-to-Ambient thJA Steady State 70 95 C/W Maximum Junction-to-Foot (Drain) Steady State R 24 30 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72245 www.vishay.com S09-0870-Rev. D, 18-May-09 1Si9435BDY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J a Parameter Symbol Test Conditions Min.Typ. Max. Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 1.0 - 3.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 70 C - 5 DS GS J V - 10 V, V = - 10 V - 20 DS GS b I A On-State Drain Current D(on) V - 5 V, V = - 4.5 V - 5 DS GS V = - 10 V, I = - 5.7 A 0.033 0.042 GS D b R V = - 6 V, I = - 5 A 0.043 0.055 Drain-Source On-State Resistance DS(on) GS D V = - 4.5 V, I = - 4.4 A 0.056 0.070 GS D b g V = - 15 V, I = - 5.7 A 13 S Forward Transconductance fs DS D b V I = - 2.3 A, V = 0 V - 0.8 - 1.1 V Diode Forward Voltage SD S GS a Dynamic Q Total Gate Charge 16 24 g Gate-Source Charge Q V = - 15 V, V = - 10 V, I = - 3.5 A 2.3 nC gs DS GS D Q Gate-Drain Charge 4.5 gd R Gate Resistance 8.8 g t Turn-On Delay Time 14 25 d(on) t Rise Time V = - 15 V, R = 15 14 25 r DD L I - 1 A, V = - 10 V, R = 6 t Turn-Off Delay Time D GEN g 42 70 ns d(off) t Fall Time 30 50 f t I = - 1.2 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 30 60 rr F Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72245 2 S09-0870-Rev. D, 18-May-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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