New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( ) Max. I (A) Q (Typ.) Definition DS DS(on) D g a 0.064 at V = - 10 V TrenchFET Gen III Power MOSFET GS - 4.5 Thermally Enhanced PowerPAK a - 30 0.078 at V = - 4.5 V 6.6 nC - 4.5 GS SC-70 Package a 0.120 at V = - 2.5 V - 4.5 GS - Small Footprint Area - Low On-Resistance PowerPAK SC-70-6 Dual 100 % R Tested g 1 Compliant to RoHS Directive 2002/95/EC S 1 2 G 1 APPLICATIONS 3 D 1 D 2 Load Switch and Battery Management for Smart Phones, D 1 Tablet PCs and Portable Media Players D 2 6 G 2 Fast Battery Charging 5 2.05 mm 2.05 mm S 2 4 S S 1 2 Marking Code D N X Part code G G X X X 1 2 Lot Traceability and Date Code Ordering Information: P-Channel MOSFET P-Channel MOSFET SiA929DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D D 1 2 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 12 GS a T = 25 C - 4.5 C a T = 70 C - 4.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 4.3 A b, c T = 70 C A - 3.4 A I - 15 Pulsed Drain Current (t = 300 s) DM a T = 25 C - 4.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.6 A T = 25 C 7.8 C T = 70 C 5 C Maximum Power Dissipation P W D b, c T = 25 C 1.9 A b, c T = 70 C 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 52 65 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 12.5 16 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 C/W. Document Number: 63398 www.vishay.com S11-1654-Rev. A, 15-Aug-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA929DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 30 V DS GS D V Temperature Coefficient V /T - 23 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 1.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.6 - 1.1 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 10 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 3 A 0.052 0.064 GS D a R V = - 4.5 V, I = - 2 A 0.062 0.078 Drain-Source On-State Resistance DS(on) GS D V = - 2.5 V, I = - 1 A 0.090 0.120 GS D a g V = - 15 V, I = - 3 A 10 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 575 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 60 pF oss DS GS C Reverse Transfer Capacitance 51 rss V = - 15 V, V = - 10 V, I = - 4.3 A 14 21 DS GS D Q Total Gate Charge g 6.6 10 nC Q Gate-Source Charge V = - 15 V, V = - 4.5 V, I = - 4.3 A 1.2 gs DS GS D Q Gate-Drain Charge 1.9 gd R Gate Resistance f = 1 MHz 1.1 5.5 11 g t Turn-On Delay Time 15 30 d(on) t Rise Time V = - 15 V, R = 4.4 18 35 r DD L I - 3.4 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 22 40 D GEN g d(off) t Fall Time 10 20 f ns Turn-On Delay Time t 510 d(on) t Rise Time V = - 15 V, R = 4.4 10 20 r DD L I - 3.4 A, V = - 10 V, R = 1 Turn-Off Delay Time t 22 40 D GEN g d(off) t Fall Time 10 20 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 4.5 S C A I Pulse Diode Forward Current - 15 SM V I = - 3.4 A, V = 0 V Body Diode Voltage - 0.89 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 20 40 ns rr Q Body Diode Reverse Recovery Charge 10 20 nC rr I = - 3.4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 9 a ns t Reverse Recovery Rise Time 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63398 2 S11-1654-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000