New Product SiA436DJ Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a Definition V (V) R () Max. Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0094 at V = 4.5 V 12 GS Thermally Enhanced PowerPAK SC-70 Package 0.0105 at V = 2.5 V 12 GS - Small Footprint Area 0.0125 at V = 1.8 V 8 12 15 nC GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC 0.0180 at V = 1.5 V 12 GS 0.0360 at V = 1.2 V APPLICATIONS 12 GS Load Switch for Portable Applications such as Smart Phones, Tablet PCs and Mobile Computing - Low Voltage Gate Drive - Low Voltage Drop - Power Switch for ICs PowerPAK SC-70-6L-Single D 1 Marking Code D 2 D A O X 3 Part code G G X X X D 6 Lot Traceability D S and Date code 5 S 2.05 mm S 2.05 mm 4 Ordering Information: SiA436DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 8 DS V Gate-Source Voltage V 5 GS a T = 25 C C 12 a T = 70 C C 12 Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 12 A a, b, c A T = 70 C 12 A Pulsed Drain Current (t = 300 s) I 50 DM a T = 25 C C 12 Continuous Source-Drain Diode Current I b, c S T = 25 C A 2.9 T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C A 3.5 b, c T = 70 C A 2.2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 28 36 thJA Maximum Junction-to-Ambient C/W R 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 63535 www.vishay.com S11-2242-Rev. A, 14-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA436DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 8V DS GS D V Temperature Coefficient V /T 11 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.35 0.8 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Source Leakage 100 nA GSS DS GS V = 8 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 8 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 15.7 A 0.0078 0.0094 GS D V = 2.5 V, I = 14.9 A 0.0087 0.0105 GS D a R V = 1.8 V, I = 13.6 A 0.0104 0.0125 Drain-Source On-State Resistance DS(on) GS D V = 1.5 V, I = 2.5 A 0.0120 0.0180 GS D V = 1.2 V, I = 1.5 A 0.0180 0.0360 GS D a g V = 4 V, I = 15.7 A 70 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1508 iss C V = 4 V, V = 0 V, f = 1 MHz Output Capacitance 535 pF oss DS GS C Reverse Transfer Capacitance 321 rss V = 4 V, V = 5 V, I = 15.7 A 16.8 25.2 DS GS D Q Total Gate Charge g 15 23 nC Q Gate-Source Charge V = 4 V, V = 4.5 V, I = 15.7 A 1.7 gs DS GS D Gate-Drain Charge Q 0.9 gd R Gate Resistance f = 1 MHz 0.5 2.5 5 g Turn-on Delay Time t 11 20 d(on) t Rise Time 10 20 r V = 4 V, R = 0.4 DD L Turn-Off Delay Time t 30 45 d(off) I 10 A, V = 4.5 V, R = 1 D GEN g t Fall Time 816 f ns Turn-on Delay Time t 10 20 d(on) t Rise Time 10 20 r V = 4 V, R = 0.4 DD L Turn-Off Delay Time t 30 45 d(off) I 10 A, V = 5 V, R = 1 D GEN g t Fall Time 816 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 12 S C A I Pulse Diode Forward Current 50 SM V I = 10 A, V = 0 V Body Diode Voltage 0.73 1.2 V SD S GS t Body Diode Reverse Recovery Time 10 20 ns rr Q Body Diode Reverse Recovery Charge 14 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 4 a ns t Reverse Recovery Rise Time 6 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 63535 2 S11-2242-Rev. A, 14-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000