P GND V IN GL C GND V DRV SiC621 www.vishay.com Vishay Siliconix 60 A VRPower Integrated Power Stage DESCRIPTION FEATURES Thermally enhanced PowerPAK MLP55-31L The SiC621 is integrated power stage solutions optimized package for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged Vishays Gen IV MOSFET technology and a in Vishays proprietary 5 mm x 5 mm MLP package, SiC621 low-side MOSFET with integrated Schottky enables voltage regulator designs to deliver up to 60 A diode continuous current per phase. Delivers up to 60 A continuous current The internal power MOSFETs utilizes Vishays High efficiency performance state-of-the-art Gen IV TrenchFET technology that delivers High frequency operation up to 2 MHz industry benchmark performance to significantly reduce Power MOSFETs optimized for 12 V input stage switching and conduction losses. 5 V PWM logic with tri-state and hold-off The SiC621 incorporates an advanced MOSFET gate driver Supports PS4 mode light load requirement for IMVP8 with IC that features high current driving capability, adaptive low shutdown supply current (5 V, 5 A) dead-time control, an integrated bootstrap Schottky diode, Under voltage lockout for V CIN and zero current detect to improve light load efficiency. The driver is also compatible with a wide range of PWM Material categorization: for definitions of compliance controllers, supports tri-state PWM, and 5 V PWM logic. please see www.vishay.com/doc 99912 A user selectable diode emulation mode (ZCD EN ) APPLICATIONS function is included to improve the light load performance. The device also supports the PS4 mode to reduce power Multi-phase VRDs for computing, graphics card and memory consumption when system operates in standby state. Intel IMVP-8 VRPower delivery - V , V , V Skylake, Kabylake platforms CORE GRAPHICS SYSTEM AGENT - V for Apollo Lake platforms CCGI Up to 18 V rail input DC/DC VR modules TYPICAL APPLICATION DIAGRAM 5V V IN BOOT PHASE V CIN ZCD EN V SWH V OUT Gate PWM driver PWM controller Fig. 1 - SiC621 Typical Application Diagram S17-1652-Rev. C, 06-Nov-17 Document Number: 67173 1 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000P V GND SWH V P SWH GND P V GND SWH GL P GND P GND V V DRV IN N.C. V IN N.C. V IN SiC621 www.vishay.com Vishay Siliconix PINOUT CONFIGURATION 33 31 30 29 28 27 26 25 24 GL 24 25 26 27 28 29 30 31 PWM 1 1 PWM 23 V V 23 SWH SWH GL GL ZCD EN 2 2 ZCD EN 22 V V 22 SWH SWH 32 CGND V 3 C 3 V CIN GND CIN 21 V V 21 SWH SWH N.C. N.C. 4 4 20 V V 20 SWH SWH 35 BOOT BOOT 5 5 19 V V 19 PGND SWH SWH P GND 6 6 N.C. V 18 N.C. 18 V SWH SWH 34 VIN PHASE 7 17 V V 17 7 PHASE SWH SWH V IN 16 V V 16 V 8 8 V SWH SWH IN IN 9 10 11 12 13 14 15 15 14 13 12 11 10 9 Top view Bottom view Fig. 2 - SiC621 Pin Configuration PIN CONFIGURATION PIN NUMBER NAME FUNCTION 1 PWM PWM input logic The ZCD EN pin enables or disables diode emulation. When ZCD EN is LOW, diode emulation is allowed. When ZCD EN is HIGH, continuous conduction mode is forced. 2 ZCD EN ZCD EN can also be put in a high impedance mode by floating the pin. If both ZCD EN and PWM are floating, the device shuts down and consumes typically 3 A (10 A max.) current. 3V Supply voltage for internal logic circuitry CIN 5 BOOT High-side driver bootstrap voltage 4, 6, 30, 31 N.C. Not connected internally, can be left floating or connected to ground 7 PHASE Return path of high-side gate driver 8 to 11, 34 V Power stage input voltage. Drain of high-side MOSFET IN 12 to 15, 28, 35 P Power ground GND 16 to 26 V Phase node of the power stage SWH 27, 33 GL Low-side MOSFET gate signal 29 V Supply voltage for internal gate driver DRV 32 C Signal ground GND ORDERING INFORMATION PART NUMBER PACKAGE MARKING CODE OPTION SiC621CD-T1-GE3 PowerPAK MLP55-31L SiC621 5 V PWM optimized SiC621DB Reference board S17-1652-Rev. C, 06-Nov-17 Document Number: 67173 2 For technical questions, contact: powerictechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P GND V SWH P V GND SWH P V GND SWH P GL GND P GND V V IN DRV V N.C. IN V N.C. IN