X-On Electronics has gained recognition as a prominent supplier of SIHB17N80E-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SIHB17N80E-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SIHB17N80E-GE3

SIHB17N80E-GE3 electronic component of Vishay
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See Product Specifications
Part No.SIHB17N80E-GE3
Manufacturer: Vishay
Category:MOSFET
Description: N-Channel 800 V 15A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
Datasheet: SIHB17N80E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.8995 ea
Line Total: USD 5.9

Availability - 6790
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7235 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 4.1975
10 : USD 3.7375
25 : USD 3.6685
100 : USD 3.2315
250 : USD 3.174
500 : USD 2.99
1000 : USD 2.76
2000 : USD 2.7255
5000 : USD 2.645

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We proudly offer the SIHB17N80E-GE3 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the SIHB17N80E-GE3 MOSFET.

SiHB17N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g 2 D PAK (TO-263) Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) Material categorization: for definitions of compliance D G S please see www.vishay.com/doc 99912 S N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 850 DS J Power factor correction power supplies (PFC) R typ. () at 25 C V = 10 V 0.25 DS(on) GS Lighting Q max. (nC) 122 g - High-intensity discharge (HID) Q (nC) 14 gs - Fluorescent ballast lighting Q (nC) 23 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and halogen-free SiHB17N80E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 800 DS V Gate-source voltage V 30 GS T = 25 C 15 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 10 A C a Pulsed drain current I 45 DM Linear derating factor 1.7 W/C b Single pulse avalanche energy E 353 mJ AS Maximum power dissipation P 208 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 5.1 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5.0 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S17-1724-Rev. A, 20-Nov-17 Document Number: 92031 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHB17N80E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.6 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 800 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 1.08 - V/C DS DS J D Gate-source threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 800 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 640 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 8.5 A - 0.25 0.29 DS(on) GS D Forward transconductance g V = 30 V, I = 8.5 A - 8.7 - S fs DS D Dynamic Input capacitance C - 2408 - iss V = 0 V, GS Output capacitance C V = 100 V, -81 - oss DS f = 1 MHz Reverse transfer capacitance C -9 - rss pF Effective output capacitance, energy C -58 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 296 - o(tr) b related Total gate charge Q -61 122 g Gate-source charge Q V = 10 V I = 8.5 A, V = 480 V -14 - nC gs GS D DS Gate-drain charge Q -23 - gd Turn-on delay time t -22 44 d(on) Rise time t -24 48 r V = 480 V, I = 8.5 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t GS g -71 142 d(off) Fall time t -26 52 f Gate input resistance R f = 1 MHz, open drain 0.3 0.7 1.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 15 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 45 S SM Diode forward voltage V T = 25 C, I = 8.5 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 416 832 ns rr T = 25 C, I = I = 8.5 A, J F S Reverse recovery charge Q - 6.4 12.8 C rr di/dt = 100 A/s, V = 25 V R Reverse recovery current I -27 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1724-Rev. A, 20-Nov-17 Document Number: 92031 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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