SiHB21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series V (V) at T max. 650 technology DS J Reduced t , Q , and I R max. at 25 C ()V = 10 V 0.176 rr rr RRM DS(on) GS Low figure-of-merit (FOM): R x Q on g Q (Max.) (nC) 84 g Low input capacitance (C ) iss Q (nC) 14 gs Increased robustness due to low Q rr Q (nC) 24 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 2 D PAK (TO-263) APPLICATIONS Telecommunications - Server and telecom power supplies G Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs) D G S Consumer and computing S - ATX power supplies N-Channel MOSFET Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHB21N60EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 21 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 14 A C a Pulsed Drain Current I 53 DM Linear Derating Factor 1.8 W/C b Single Pulse Avalanche Energy E 367 mJ AS Maximum Power Dissipation P 227 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg = 125 C 70 Drain-Source Voltage Slope T J dV/dt V/ns d Reverse Diode dV/dt 50 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5.1 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 900 A/s, starting T = 25 C. SD D J S17-0299-Rev. B, 27-Feb-17 Document Number: 91596 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHB21N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.55 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.59 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-Source On-State Resistance R V = 10 V I = 11 A - 0.153 0.176 DS(on) GS D Forward Transconductance g V = 30 V, I = 11 A - 7 - S fs DS D Dynamic Input Capacitance C - 2030 - V = 0 V, iss GS Output Capacitance C -V = 100 V, 105- oss DS Reverse Transfer Capacitance C -5f = 1 MHz - rss pF Effective output capacitance, energy C -86 - o(er) a related V = 0 V, V = 0 V to 480 V GS DS Effective output capacitance, time C - 299 - b o(tr) related Total Gate Charge Q -56 84 g Gate-Source Charge Q -1V = 10 V I = 11 A, V = 480 V 4- nC gs GS D DS Gate-Drain Charge Q -24- gd Turn-On Delay Time t -21 42 d(on) Rise Time t -31 62 r V = 480 V, I = 11 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -5g GS 989 d(off) Fall Time t -2754 f Gate Input Resistance R f = 1 MHz, open drain 0.2 0.56 1.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 21 S showing the A G integral reverse Pulsed Diode Forward Current I S -- 53 SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 11 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 135 270 ns rr T = 25 C, I = I = 11 A, J F S Reverse Recovery Charge Q -0.76 1.52 C rr dI/dt = 100 A/s, V = 400 V R Reverse Recovery Current I -11 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS b. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S17-0299-Rev. B, 27-Feb-17 Document Number: 91596 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000