X-On Electronics has gained recognition as a prominent supplier of SIHB22N60E-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SIHB22N60E-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SIHB22N60E-GE3

SIHB22N60E-GE3 electronic component of Vishay
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See Product Specifications
Part No.SIHB22N60E-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
Datasheet: SIHB22N60E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.1285 ea
Line Total: USD 4.13

Availability - 2667
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1212 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 50
Multiples : 50
50 : USD 2.457
150 : USD 2.457
500 : USD 2.457
1000 : USD 2.457
2000 : USD 2.457

2667 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 4.1285
10 : USD 3.3925
25 : USD 2.852
100 : USD 2.668
250 : USD 2.5875
500 : USD 2.461
1000 : USD 2.231
2000 : USD 2.2195
5000 : USD 2.208

873 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 50
Multiples : 50
50 : USD 3.8693
200 : USD 3.5528
400 : USD 3.3231
600 : USD 3.1509

931 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 32
Multiples : 1
32 : USD 3.0957
50 : USD 2.9778
100 : USD 2.8766
250 : USD 2.7894
500 : USD 2.7135

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the SIHB22N60E-GE3 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the SIHB22N60E-GE3 MOSFET.

SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D 2 D PAK (TO-263) Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) D G Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S S N-Channel MOSFET APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) PRODUCT SUMMARY Power factor correction power supplies (PFC) V (V) at T max. 650 DS J R max. ( ) at 25 C V = 10 V 0.18 Lighting DS(on) GS Q max. (nC) 86 - High-intensity discharge (HID) g Q (nC) 11 - Fluorescent ballast lighting gs Q (nC) 24 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION 2 Package D PAK (TO-263) SiHB22N60E-GE3 Lead (Pb)-free and Halogen-free SiHB22N60ET1-GE3 SIHB22N60ET5-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 21 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 13 A C a Pulsed Drain Current I 56 DM Linear Derating Factor 1.8 W/C b Single Pulse Avalanche Energy E 367 mJ AS Maximum Power Dissipation P 227 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 11 c Soldering Recommendations (Peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5.1 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-1704-Rev. J, 29-Aug-16 Document Number: 91472 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHB22N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -0.55 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 250 A - 0.71 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 11 A - 0.15 0.18 DS(on) GS D Forward Transconductance g V = 8 V, I = 5 A - 6.4 - S fs DS D Dynamic Input Capacitance C - 1920 - iss V = 0 V, GS Output Capacitance C -9V = 100 V, 0- oss DS f = 1 MHz Reverse Transfer Capacitance C -6- rss pF Effective Output Capacitance, Energy C -73 - o(er) a Related V = 0 V to 480 V, V = 0 V DS GS Effective Output Capacitance, Time C - 263 - o(tr) b Related Total Gate Charge Q -57 86 g Gate-Source Charge Q -1V = 10 V I = 11 A, V = 480 V1- nC gs GS D DS Gate-Drain Charge Q -24- gd Turn-On Delay Time t -18 36 d(on) Rise Time t -27 54 r V = 380 V, I = 11 A, DD D ns V = 10 V, R = 4.7 Turn-Off Delay Time t -6GS g 699 d(off) Fall Time t -3570 f Gate Input Resistance R f = 1 MHz, open drain 0.3 0.77 1.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 21 S showing the A G integral reverse Pulsed Diode Forward Current I -- 56 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 11 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 344 - ns rr T = 25 C, I = I = 11 A, J F S Reverse Recovery Charge Q -5.3 - C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -28 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-1704-Rev. J, 29-Aug-16 Document Number: 91472 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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