SiHB28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES D Fast body diode MOSFET using E series technology 2 D PAK (TO-263) Reduced t , Q , and I rr rr RRM Low figure-of-merit (FOM): R x Q on g G Low input capacitance (C ) iss Low switching losses due to reduced Q rr Ultra low gate charge (Q ) g D Avalanche energy rated (UIS) G S Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Telecommunications PRODUCT SUMMARY - Server and telecom power supplies V (V) 650 DS Lighting R max. () at V = 10 V 0.123 DS(on) GS - High intensity discharge (HID) Q typ. (nC) 33 - Light emitting diodes (LEDs) g Consumer and computing I (A) 28 D - ATX power supplies Configuration Single Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package D2PAK (TO-263) SIHB28N60EF-GE3 Lead (Pb)-free and Halogen-free SIHB28N60EF-T1-GE3 SIHB28N60EF-T5-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 28 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 18 A C a Pulsed drain current I 75 DM Linear derating factor 2W/C b Single pulse avalanche energy E 691 mJ AS Maximum power dissipation P 250 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 50 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 900 A/s, starting T = 25 C SD D J S21-0115-Rev. D, 15-Feb-2021 Document Number: 91601 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHB28N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.76 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 A DS GS Zero gate voltage drain current I DSS V = 480 V, V = 0 V, T = 125 C - - 2 mA DS GS J Drain-source on-state resistance R V = 10 V I = 14 A - 0.107 0.123 DS(on) GS D Forward transconductance g V = 30 V, I = 14 A - 9.7 - S fs DS D Dynamic Input capacitance C - 2714 - V = 0 V, iss GS Output capacitance C -V = 100 V, 123- oss DS Reverse transfer capacitance C -6f = 1 MHz - rss pF Effective output capacitance, energy C -98 - o(er) a related V = 0 V, V = 0 V to 480 V GS DS Effective output capacitance, time C - 356 - b o(tr) related Total gate charge Q - 80 120 g Gate-source charge Q -1V = 10 V I = 14 A, V = 480 V 7- nC gs GS D DS Gate-drain charge Q -33- gd Turn-on delay time t -24 48 d(on) Rise time t -40 80 r V = 480 V, I = 14 A DD D ns R = 9.1 , V = 10 V Turn-off delay time t -g GS 82123 d(off) Fall time t -3978 f Gate input resistance R f = 1 MHz, open drain 0.2 0.5 1.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 28 S showing the A G integral reverse Pulsed diode forward current I S -- 70 SM p - n junction diode Diode forward voltage V T = 25 C, I = 11 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 142 284 ns rr T = 25 C, I = I = 14 A, J F S Reverse recovery charge Q - 0.97 1.94 C rr dI/dt = 100 A/s, V = 400 V R Reverse recovery current I - 13.2 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS b. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S21-0115-Rev. D, 15-Feb-2021 Document Number: 91601 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000