IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design V (V) at T max. 550 DS J - Low Area Specific On-Resistance R max. at 25 C ()V = 10 V 0.25 DS(on) GS - Low Input Capacitance (C ) iss Q max. (nC) 170 g - Reduced Capacitive Switching Losses Q (nC) 14 gs - High Body Diode Ruggedness Q (nC) 28 gd - Avalanche Energy Rated (UIS) Configuration Single Optimal Efficiency and Operation - Low Cost D - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): R x Q on g TO-247AC - Fast Switching Material categorization: For definitions of compliance G please see www.vishay.com/doc 99912 Note * Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply. S S D G APPLICATIONS N-Channel MOSFET Consumer Electronics - Displays (LCD or Plasma TV) Server and Telecom Power Supplies - SMPS Industrial - Welding - Induction Heating - Motor Drives Battery Chargers SMPS - Power Factor Correction (PFC) ORDERING INFORMATION Package TO-247AC Lead (Pb)-free IRFP460BPbF Lead (Pb)-free and Halogen-free SiHG460B-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS Gate-Source Voltage 20 V V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 20 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 13 A C a Pulsed Drain Current I 62 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 281 mJ AS Maximum Power Dissipation P 278 W D Operating Junction and Storage Temperature Range T , T - 55 to + 150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.36 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 10 mH, R = 25 , I = 7.5 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S12-0812-Rev. B, 16-Apr-12 Document Number: 91502 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFP460B, SiHG460B www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) -0.45 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V /T -0.56 - V Temperature Coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 10 A - 0.2 0.25 DS(on) GS D Forward Transconductance g V = 50 V, I = 10 A - 12 - S fs DS D Dynamic Input Capacitance C - 3094 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 152- oss DS f = 1 MHz Reverse Transfer Capacitance C -13- rss pF Effective output capacitance, energy C - 131 - o(er) a related V = 0 V, GS V = 0 V to 400 V Effective output capacitance, time DS C - 189 - b o(tr) related Total Gate Charge Q - 85 170 g Gate-Source Charge Q -1V = 10 V I = 10 A, V = 400 V4- nC gs GS D DS Gate-Drain Charge Q -28- gd Turn-On Delay Time t -24 50 d(on) Rise Time t -31 62 r V = 400 V, I = 10 A, DD D ns Turn-Off Delay Time t -117176 d(off) V = 10 V, R = 9.1 GS g Fall Time t -56112 f Gate Input Resistance R f = 1 MHz, open drain - 1.8 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 20 S showing the A G integral reverse Pulsed Diode Forward Current I -- 80 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 10 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 437 - ns rr T = 25 C, I = I = 10 A, J F S Reverse Recovery Charge Q -5.9 - C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -25 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S12-0812-Rev. B, 16-Apr-12 Document Number: 91502 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000