SiHG70N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series V (V) at T max. 650 technology DS J Reduced t , Q , and I R typ. at 25 C ( )V = 10 V 0.033 rr rr RRM DS(on) GS Low figure-of-merit (FOM): R x Q on g Q (Max.) (nC) 380 g Low input capacitance (C ) iss Q (nC) 62 gs Increased robustness due to low Q rr Q (nC) 102 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 TO-247AC APPLICATIONS Telecommunications - Server and telecom power supplies G Lighting - High intensity discharge (HID) S - Light emitting diodes (LEDs) D S Consumer and computing G - ATX power supplies N-Channel MOSFET Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG70N60EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 70 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 45 A C a Pulsed Drain Current I 229 DM Linear Derating Factor 4.2 W/C b Single Pulse Avalanche Energy E 1706 mJ AS Maximum Power Dissipation P 520 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 50 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 11 A DD J g AS c. 1.6 mm from case d. I = 35 A, dI/dt = 750 A/s, V = 400 V SD DS S17-0297-Rev. C, 27-Feb-17 Document Number: 91598 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHG70N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) R -0.24 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.69 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 A DS GS Zero Gate Voltage Drain Current I DSS V = 480 V, V = 0 V, T = 125 C - - 2 mA DS GS J Drain-Source On-State Resistance R V = 10 V I = 35 A - 0.033 0.038 DS(on) GS D Forward Transconductance g V = 30 V, I = 35 A - 25 - S fs DS D Dynamic Input Capacitance C V = 0 V, - 7500 - iss GS Output Capacitance C -V = 100 V, 378- oss DS Reverse Transfer Capacitance C -5f = 1 MHz - rss pF Effective output capacitance, energy C - 263 - o(er) a related V = 0 V, V = 0 V to 480 V GS DS Effective output capacitance, time C - 926 - o(tr) b related Total Gate Charge Q - 253 380 g Gate-Source Charge Q -6V = 10 V I = 35 A, V = 480 V 2- nC gs GS D DS Gate-Drain Charge Q -102- gd Turn-On Delay Time t -56 84 d(on) Rise Time t - 107 161 r V = 480 V, I = 35 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -g GS 257386 d(off) Fall Time t -123185 f Gate Input Resistance R f = 1 MHz, open drain 0.5 1.1 2.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 70 S showing the A G integral reverse Pulsed Diode Forward Current I S -- 229 SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 35 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 213 426 ns rr T = 25 C, I = I = 35 A, J F S Reverse Recovery Charge Q -1.6 3.2 C rr dI/dt = 100 A/s, V = 400 V R Reverse Recovery Current I -16 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS b. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S17-0297-Rev. C, 27-Feb-17 Document Number: 91598 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000