SiHH24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Completely lead (Pb)-free device V (V) at T max. 700 DS J Low figure-of-merit (FOM) R x Q on g R typ. () at 25 C V = 10 V 0.130 DS(on) GS Low input capacitance (C ) iss Q max. (nC) 116 g Q (nC) 19 Reduced switching and conduction losses gs Q (nC) 33 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Kelvin connection for reduced gate noise PowerPAK 8 x 8 Pin 4 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 4 Pin 1 APPLICATIONS 1 2 Server and telecom power supplies Pin 2 3 Switch mode power supplies (SMPS) 3 Power factor correction power supplies (PFC) Pin 3 Lighting N-Channel MOSFET - High-intensity discharge (HID) - Fluorescent ballast lighting Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package PowerPAK 8 x 8 Lead (Pb)-free and Halogen-free SiHH24N65E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage V 30 GS T = 25 C 23 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 15 A C a Pulsed Drain Current I 58 DM Linear Derating Factor 1.61 W/C b Single Pulse Avalanche Energy E 353 mJ AS Maximum Power Dissipation P 202 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns c Reverse Diode dV/dt 16 Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5 A. DD J g AS c. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-0524-Rev. A, 21-Mar-16 Document Number: 91784 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHH24N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R 38 50 thJA C/W Maximum Junction-to-Case (Drain) 0.48 0.62 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.75 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 25 DS GS J Drain-Source On-State Resistance R V = 10 V I = 12 A - 0.130 0.150 DS(on) GS D Forward Transconductance g V = 30 V, I = 12 A - 8.2 - S fs DS D Dynamic Input Capacitance C - 2814 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 121- oss DS f = 1 MHz Reverse Transfer Capacitance C -5- rss pF Effective Output Capacitance, Energy C -88 - o(er) a Related V = 0 V to 520 V, V = 0 V DS GS Effective Output Capacitance, Time C - 365 - o(tr) b Related Total Gate Charge Q -77 116 g Gate-Source Charge Q -1V = 10 V I = 12 A, V = 520 V9- nC gs GS D DS Gate-Drain Charge Q -33- gd Turn-On Delay Time t -29 58 d(on) Rise Time t -59 71 r V = 520 V, I = 12 A, DD D ns V = 10 V, R = 9.1 Turn-Off Delay Time t -7GS g 8117 d(off) Fall Time t -4692 f Gate Input Resistance R f = 1 MHz, open drain 0.27 0.55 1.10 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 23 S showing the A G integral reverse Pulsed Diode Forward Current I -- 58 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 12 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 436 872 ns rr T = 25 C, I = I = 12 A, J F S Reverse Recovery Charge Q - 7.4 14.8 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -29 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S16-0524-Rev. A, 21-Mar-16 Document Number: 91784 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000