SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation one V at T max. (V) 650 DS J High E capability AR R max. at 25 C ()V = 10 V 0.190 DS(on) GS Lower figure-of-merit R x Q on g Q max. (nC) 98 g Q (nC) 17 100 % avalanche tested gs Q (nC) 25 gd Ultra low R on Configuration Single dV/dt ruggedness Ultra low gate charge (Q ) g D Material categorization: for definitions of compliance TO-220AB please see www.vishay.com/doc 99912 APPLICATIONS G PFC power supply stages Hard switching topologies S Solar inverters D G S UPS N-Channel MOSFET Motor control Lighting Server telecom ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP22N60S-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 22 C Continuous Drain Current V at 10 V I GS D T = 100 C 13 A C a Pulsed Drain Current I 65 DM Linear Derating Factor TO-220AB 2 W/C b Single Pulse Avalanche Energy E 690 AS mJ a Repetitive Avalanche Energy E 25 AR Maximum Power Dissipation TO-220AB P 250 W D Drain-Source Voltage Slope T = 125 C 37 J dV/dt V/ns d Reverse Diode dV/dt 5.3 Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C c Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S15-0982-Rev. F, 27-Apr-15 Document Number: 91373 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHP22N60S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient TO-220AB R -62 thJA C/W Maximum Junction-to-Case (Drain) TO-220AB R -0.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 1 mA 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.70 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 600 V, V = 0 V, T = 150 C - - 100 DS GS J Drain-Source On-State Resistance R V = 10 V I = 11 A - 0.160 0.190 DS(on) GS D a Forward Transconductance g V = 50 V, I = 13 A - 9.4 - S fs DS D Dynamic Input Capacitance C 562 2810 5620 iss V = 0 V, GS Output Capacitance C 296V = 25 V, 14802960 oss DS f = 1.0 MHz pF Reverse Transfer Capacitance C 6.63366 rss Effective Output Capacitance a C (TR) V = 0 V V = 0 V to 480 V - 155 - oss eff. GS DS (Time Related) Total Gate Charge Q - 75 110 g Gate-Source Charge Q -1V = 10 V I = 22 A, V = 480 V7- nC gs GS D DS Gate-Drain Charge Q -25- gd Turn-On Delay Time t -24 50 d(on) Rise Time t - 68 100 r V = 380 V, I = 22 A, DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -g GS 77115 d(off) Fall Time t -5990 f Gate Input Resistance R f = 1 MHz, open drain 0.13 0.65 1.3 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 22 S showing the A G integral reverse Pulsed Diode Forward Current I -- 88 SM p - n junction diode S Diode Forward Voltage V T = 25 C, I = 22 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 462 690 ns rr T = 25 C, I = I , J F S Reverse Recovery Charge Q - 8.3 16 C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -30 60 A RRM Note a. C (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss eff. oss DS DS S15-0982-Rev. F, 27-Apr-15 Document Number: 91373 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000