SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal design V (V) at T max. 550 DS J - Low area specific on-resistance R max. () at 25 C V = 10 V 3.2 DS(on) GS - Low input capacitance (C ) iss Q max. (nC) 12 g - Reduced capacitive switching losses Q (nC) 2 gs - High body diode ruggedness Available Q (nC) 3 gd - Avalanche energy rated (UIS) Configuration Single Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): R x Q on g D - Fast switching Material categorization: for definitions of compliance IPAK please see www.vishay.com/doc 99912 (TO-251) APPLICATIONS D G Consumer electronics -Displays (LCD or plasma TV) Server and telecom power supplies S S D G - SMPS N-Channel MOSFET Industrial - Welding - Induction heating - Motor drives Battery chargers ORDERING INFORMATION Package IPAK (TO-251) Lead (Pb)-free SiHU3N50D-E3 Lead (Pb)-free and Halogen-free SiHU3N50D-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS Gate-Source Voltage 30 V V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 3.0 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 1.9 A C a Pulsed Drain Current I 5.5 DM Linear Derating Factor 0.56 W/C b Single Pulse Avalanche Energy E 10.4 mJ AS Maximum Power Dissipation P 69 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.22 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 3 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J S19-0604-Rev. D, 15-Jul-2019 Document Number: 91493 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHU3N50D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -1.8 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 250 A - 0.56 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 1.5 A - 2.6 3.2 DS(on) GS D a Forward Transconductance g V = 8 V, I = 1.5 A - 1 - S fs DS D Dynamic Input Capacitance C - 175 - iss V = 0 V, GS Output Capacitance C -2V = 100 V, 1- oss DS f = 1 MHz Reverse Transfer Capacitance C -5- rss pF Effective Output Capacitance, Energy C -21 - o(er) b Related V = 0 V to 400 V, V = 0 V DS GS Effective Output Capacitance, Time C -26 - c o(tr) Related Total Gate Charge Q -6 12 g Gate-Source Charge Q -2V = 10 V I = 1.5 A, V = 400 V - nC gs GS D DS Gate-Drain Charge Q -3- gd Turn-On Delay Time t -12 24 d(on) Rise Time t -9 18 r V = 400 V, I = 1.5 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -1g GS 122 d(off) Fall Time t -1326 f Gate Input Resistance R f = 1 MHz, open drain - 3.3 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 3 S showing the A G integral reverse Pulsed Diode Forward Current I -- 12 SM p - n junction diode S Diode Forward Voltage V T = 25 C, I = 1.5 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 293 - ns rr T = 25 C, I = I = 1.5 A, J F S Reverse Recovery Charge Q -0.74 - C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -5 - A RRM Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS c. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S19-0604-Rev. D, 15-Jul-2019 Document Number: 91493 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000