X-On Electronics has gained recognition as a prominent supplier of SQ2361ES-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQ2361ES-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQ2361ES-T1_GE3 Vishay

SQ2361ES-T1_GE3 electronic component of Vishay
SQ2361ES-T1_GE3 Vishay
SQ2361ES-T1_GE3 MOSFETs
SQ2361ES-T1_GE3  Semiconductors

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See Product Specifications
Part No. SQ2361ES-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
Datasheet: SQ2361ES-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2954 ea
Line Total: USD 886.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 13 May to Mon. 19 May
MOQ : 492
Multiples : 1
492 : USD 0.5454
573 : USD 0.4685
596 : USD 0.4508
933 : USD 0.2878

0
Ship by Tue. 13 May to Mon. 19 May
MOQ : 5
Multiples : 1
5 : USD 0.7161
50 : USD 0.5872
100 : USD 0.4848
500 : USD 0.3497
1500 : USD 0.3299

0
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2954
6000 : USD 0.2887
9000 : USD 0.2887
12000 : USD 0.2887
15000 : USD 0.2819

0
Ship by Tue. 13 May to Mon. 19 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2686

0
Ship by Tue. 20 May to Fri. 23 May
MOQ : 5
Multiples : 5
5 : USD 2.0674
50 : USD 1.8605
150 : USD 1.7481
500 : USD 1.618
3000 : USD 1.561
6000 : USD 1.5354

0
Ship by Fri. 09 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 1.809
10 : USD 0.8034
100 : USD 0.4515
500 : USD 0.3629
1000 : USD 0.3402
3000 : USD 0.3175

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQ2361ES-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQ2361ES-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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SQ2361ES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) -60 DS AEC-Q101 qualified R ( ) at V = -10 V 0.177 DS(on) GS 100 % R and UIS tested g R ( ) at V = -4.5 V 0.246 DS(on) GS I (A) -2.8 Material categorization: D for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 SOT-23 (TO-236) S D 3 G 2 S D 1 P-Channel MOSFET G Top View Marking Code: 9Dxxx ORDERING INFROMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2361ES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -60 DS V Gate-Source Voltage V 20 GS T = 25 C -2.8 C Continuous Drain Current I D T = 125 C -1.6 C Continuous Source Current (Diode Conduction) I -2.5 A S a Pulsed Drain Current I -11 DM Single Pulse Avalanche Current I -12.5 AS L = 0.1 mH Single Pulse Avalanche Energy E 7.8 mJ AS T = 25 C 2 C a Maximum Power Dissipation P W D T = 125 C 0.67 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT b Junction-to-Ambient PCB Mount R 175 thJA C/W Junction-to-Foot (Drain) R 75 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR4 material). S15-1208-Rev. A, 21-May-15 Document Number: 66894 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ2361ES www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = -250 A -1.5 - -2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -60 V - - -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -60 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -60 V, T = 175 C - - -150 GS DS J a On-State Drain Current I V = -10 V V -5 V -10 - - A D(on) GS DS V = -10 V I = -2.4 A - 0.130 0.177 GS D V = -10 V I = -2.4 A, T = 125 C - - 0.310 GS D J a Drain-Source On-State Resistance R DS(on) V = -10 V I = -2.4 A, T = 175 C - - 0.320 GS D J V = -4.5 V I = -1.8 A - 0.205 0.246 GS D b Forward Transconductance g V = -10 V, I = -2 A - 5 - S fs DS D b Dynamic Input Capacitance C - 380 550 iss Output Capacitance C -5V = 0 V V = -30 V, f = 1 MHz075 pF oss GS DS Reverse Transfer Capacitance C -3042 rss c Total Gate Charge Q -9 12 g c Gate-Source Charge Q -1V = -10 V V = -30 V, I = -6 A.6- nC gs GS DS D c Gate-Drain Charge Q -3.3- gd Gate Resistance R f = 1 MHz 3.1 4.1 5.2 g c Turn-On Delay Time t -8 11 d(on) c Rise Time t -9 12 r V = -30 V, R = 20 DD L ns I -1.5 A, V = -10 V, R = 1 c D GEN g Turn-Off Delay Time t -2226 d(off) c Fall Time t -46 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- -11 A SM Forward Voltage V I = -1.5 A, V = 0 V - -0.9 -1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1208-Rev. A, 21-May-15 Document Number: 66894 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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