SQJ457EP-T1_GE3 Vishay

SQJ457EP-T1_GE3 electronic component of Vishay
SQJ457EP-T1_GE3 Vishay
SQJ457EP-T1_GE3 MOSFETs
SQJ457EP-T1_GE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SQJ457EP-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJ457EP-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SQJ457EP-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
Datasheet: SQJ457EP-T1_GE3 Datasheet (PDF)
Price (USD)
3000: USD 0.3889 ea
Line Total: USD 1166.7 
Availability : 58200
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
3000$ 0.3889
6000$ 0.3804
24000$ 0.3764

Availability 2028
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 180
Multiples : 1
QtyUnit Price
180$ 1.4511
246$ 1.0574
249$ 1.0469
333$ 0.7831
336$ 0.7752
500$ 0.6059
1000$ 0.4194


Availability 58200
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3889
6000$ 0.3804
24000$ 0.3764


Availability 1505
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7074
10$ 1.358
30$ 0.8886
100$ 0.6829
500$ 0.6131
1000$ 0.5771

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQJ457EP-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ457EP-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SQJ457EP-T1_GE3 is an automotive-grade P-Channel MOSFET with a maximum drain-source voltage of -60V, a maximum gate-source voltage of 20V, and AEC-Q101 qualification from Vishay. The device is manufactured using the latest advancements in silicon technology to offer high performance with a low resistance at a wide range of temperature ranges. It is designed for use in automotive applications where reliability and functionality are a necessity.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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