SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) 60 DS Package with Low Thermal Resistance R ( ) at V = 10 V 0.015 DS(on) GS d AEC-Q101 Qualified I (A) 56 D 100 % R and UIS Tested g Configuration Single Material categorization: D TO-220AB For definitions of compliance please see www.vishay.com/doc 99912 G S N-Channel MOSFET GD S Top View ORDERING INFORMATION Package TO-220 Lead (Pb)-free and Halogen-free SQP60N06-15-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 56 C Continuous Drain Current I D T = 125 C 32 C a Continuous Source Current (Diode Conduction) I 60 A S b Pulsed Drain Current I 190 DM Single Pulse Avalanche Current I 29 AS L = 0.1 mH Single Pulse Avalanche Energy E 42 mJ AS T = 25 C 107 C b Maximum Power Dissipation P W D T = 125 C 35 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 1.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S13-0840-Rev. A, 22-Apr-13 Document Number: 63554 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQP60N06-15 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 - 3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 75 - - A D(on) GS DS V = 10 V I = 30 A - 0.012 0.015 GS D a Drain-Source On-State Resistance R V = 10 V I = 30 A, T = 125 C - - 0.027 DS(on) GS D J V = 10 V I = 30 A, T = 175 C - - 0.033 GS D J b Forward Transconductance g V = 15 V, I = 30 A - 61 - S fs DS D b Dynamic Input Capacitance C - 1983 2480 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz314395 pF oss GS DS Reverse Transfer Capacitance C -125160 rss c Total Gate Charge Q -33 50 g c Gate-Source Charge Q -V = 10 V V = 30 V, I = 60 A10.7- nC gs GS DS D c Gate-Drain Charge Q -8.8- gd Gate Resistance R f = 1 MHz 0.8 1.6 2.4 g c Turn-On Delay Time t -11 17 d(on) c Rise Time t -12 18 r V = 30 V, R = 0.5 DD L ns c I 60 A, V = 10 V, R = 1 Turn-Off Delay Time t -2D GEN g132 d(off) c Fall Time t -711 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 190 A SM Forward Voltage V I = 30 A, V = 0 - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0840-Rev. A, 22-Apr-13 Document Number: 63554 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000