X-On Electronics has gained recognition as a prominent supplier of SSM3J133TU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J133TU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J133TU,LF Toshiba

SSM3J133TU,LF electronic component of Toshiba
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Part No.SSM3J133TU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET Small-signal MOSFET P-Channel
Datasheet: SSM3J133TU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
62: USD 0.1251 ea
Line Total: USD 7.76 
Availability - 605
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 62  Multiples: 1
Pack Size: 1
Availability Price Quantity
605
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2948
10 : USD 0.1946
25 : USD 0.1927
100 : USD 0.1293
250 : USD 0.128
500 : USD 0.1251

13
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6375
10 : USD 0.5305
30 : USD 0.4772
100 : USD 0.4257
500 : USD 0.3932
1000 : USD 0.376

605
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 62
Multiples : 1
62 : USD 0.1251

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM3J133TU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J133TU,LF and other electronic components in the MOSFETs category and beyond.

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SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J133TU Power Management Switch Applications Unit: mm 1.5V drive 2.10.1 Low ON-resistance: R = 88.4 m (max) ( V = -1.5 V) DS(ON) GS R = 56.0 m (max) ( V = -1.8 V) 1.70.1 DS(ON) GS R = 39.7 m (max) ( V = -2.5 V) DS(ON) GS R = 29.8 m (max) ( V = -4.5 V) DS(ON) GS 1 3 2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit V V Drain-source voltage -20 DSS V V Gate-source voltage 8 GSS DC I (Note1) -5.5 D Drain current A Pulse I (Note1) -11.0 DP P (Note2) 500 D power dissipation mW 1: Gate t<1s 1000 2: Source UFM T C Channel temperature 150 ch 3: Drain T C Storage temperature range 55 to 150 stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2U1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the weight: 6.6 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: The channel temperature should not exceed 150C during use. Note2: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (Top view) 3 3 JJL 1 2 1 2 Start of commercial production 2011-02 1 2014-03-01 2.00.1 0.650.05 0.70.05 0.1660.05 +0.1 0.3 -0.05SSM3J133TU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 V (BR) DSS D GS Drain-source breakdown voltage V I = -1 mA, V = 5 V . (Note 4) -15 V (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -1.0 A (Note 3) 5.2 10.4 S fs DS D I = -3.0 A, V = -4.5 V (Note 3) 24.9 29.8 D GS I = -2.5 A, V = -2.5 V (Note 3) 31.1 39.7 D GS Drain-source ON-resistance R m DS (ON) I = -1.5 A, V = -1.8 V (Note 3) 38.8 56.0 D GS I = -0.5 A, V = -1.5 V (Note 3) 47.4 88.4 D GS Input capacitance C 840 iss V = -10 V, V = 0 V DS GS pF Output capacitance C 118 oss f = 1 MHz Reverse transfer capacitance C 99 rss Turn-on time t V = -10 V, I = -2.0 A 32 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t 107 GS G off Total gate charge Q 12.8 g V = -10 V, I = -4.0 A, DD D nC Gate-source charge Q 1.4 gs1 V = -4.5 V GS Gate-drain charge Q 3.0 gd Drain-Source forward voltage V I = 5.5A, V = 0 V (Note3) 0.83 1.2 V DSF D GS Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V mode. Note that the (BR)DSX drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit (b) V IN 0 V 90% OUT 0 IN 10% 2.5 V 2.5V R L V DS (ON) (c) V OUT 90% 10 s V DD V = -10 V DD 10% R = 4.7 G V DD t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common source Ta = 25C Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the th D SSM3J133TU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration. 2 2014-03-01 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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