SSM3J132TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J132TU Power Management Switch Applications 1.2-V drive Unit: mm Low ON-resistance: R = 94 m (max) ( V = -1.2 V) DS(ON) GS R = 39 m (max) ( V = -1.5 V) DS(ON) GS R = 29 m (max) ( V = -1.8 V) DS(ON) GS R = 21 m (max) ( V = -2.5 V) DS(ON) GS R = 17 m (max) ( V = -4.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V -12 V DSS Gate-Source voltage V 6 V GSS DC I -5.4 D Drain current A Pulse I -10.8 DP P (Note 1) 500 D Power dissipation mW t<1s 1000 Channel temperature T 150 C ch 1: Gate Storage temperature range T -55 to 150 C stg 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the UFM reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the TOSHIBA 2-2U1A Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual Weight: 6.6 mg (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 3 3 JJK 1 2 1 2 Start of commercial production 2011-02 1 2014-03-01 SSM3J132TU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -12 (BR) DSS D GS Drain-Source breakdown voltage V V I = -1 mA, V = 5 V (Note 3) -7 (BR) DSX D GS Drain cut-off current I V = -10 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 6 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -2.0 A (Note 2) 11 22 S fs DS D I = -5.0 A, V = -4.5 V (Note 2) 14 17 D GS I = -5.0 A, V = -2.5 V (Note 2) 17 21 D GS Drainsource ON-resistance R m I = -3.5 A, V = -1.8 V (Note 2) 20 29 DS (ON) D GS I = -1.5 A, V = -1.5 V (Note 2) 23 39 D GS I = -0.4 A, V = -1.2 V (Note 2) 31 94 D GS Input capacitance C 2700 iss V = -10 V, V = 0 V DS GS Output capacitance pF C 525 oss f = 1 MHz Reverse transfer capacitance C 525 rss Turn-on time t V = -10 V, I = -1.0 A 38 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t GS G 210 off Total Gate Charge Q 33 g V = -6 V, I = -5.4 A, DD DS Gate-Source Charge Q nC 4.3 gs1 V = -4.5 V GS Gate-Drain Charge Q 8 gd Drain-Source forward voltage V I = 5.4 A, V = 0 V (Note 2) 0.68 1.0 V DSF D GS Note 2: Pulse test Note 3: If a forward bias is applied between gate and source, this device enters V mode. (BR)DSX Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit 0 V (a) Test Circuit (b) V 90% IN OUT 0 IN 10% 2.5 V 2.5V R L V DS (ON) 90% (c) V OUT 10 s V DD V = -10 V 10% DD V DD = 4.7 R G t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the th D SSM3J132TU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration. 2 2014-03-01 R G