SUD40N08-16
Vishay Siliconix
N-Channel 80-V (D-S) 175C MOSFET
FEATURES
PRODUCT SUMMARY
TrenchFET Power MOSFET
V (V) r () I (A)
DS DS(on) D
175C Maximum Junction Temperature
100% R Tested
80 0.016 @ V = 10 V 40 g
GS
D
TO-252
G
Drain Connected to Tab
GD S
Top View
Ordering Information:
S
SUD40N08-16
SUD40N08-16E3 (Lead Free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25C UNLESS OTHERWISE NOTED)
A
Parameter Symbol Limit Unit
Drain-Source Voltage V 80
DS
VV
Gate-Source Voltage V 20
GS
T = 25C 40
C
bb
Continuous Drain Current (TContinuous Drain Current (T = 175 = 175C)C) II
JJ DD
T = 125C 30
C
Pulsed Drain Current I 60
A
DM
Continuous Source Current (Diode Conduction) I 40
S
Avalanche Current I 40
AR
Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH E 80 mJ
AR
b
T = 25C 136
C
Maximum Power DissipationMaximum Power Dissipation PP WW
D
a
T = 25C 3
A
Operating Junction and Storage Temperature Range T , T 55 to 175 C
J stg
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t 10 sec 15 18
aa
Junction-to-AmbientJti tAbi t RR
thJA
Steady State 40 50
C/WC/W
Junction-to-Case R 0.85 1.1
thJC
Notes
a. Surface Mounted on 1 x1 FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71323
www.vishay.com
S-40272Rev. C, 23-Feb-04
1SUD40N08-16
Vishay Siliconix
SPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED)
J
a
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 80
GS D
(BR)DSS
VV
Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0
GS(th) DS GS D
V = 0 V, V = 20 V
Gate-Body Leakage I 100 nA
GSS DS GS
V = 80 V, V = 0 V 1
DS GS
V = 80 V, V = 0 V, T = 125C 50
Zero Gate Voltage Drain Currentg I A
DS GS J
DSDSSS
V = 80 V, V = 0 V, T = 175C 250
DS GS J
b
On-State Drain Current I V = 5 V, V = 10 V 60 A
D(on) DS GS
V = 10 V, I = 40 A 0.013 0.016
GS D
b V = 10 V, I = 40 A, T = 125C 0.027
Drain-Source On-State Resistance r
GS D J
DSDS((on)on)
V = 10 V, I = 40 A, T = 175C 0.037
GS D J
b
Forward Transconductance g V = 15 V, I = 40 A 45 S
fs DS D
a
Dynamic
Input Capacitance C 1960
iss
Output Capacitance C V = 0 V, V = 25 V, F = 1 MHz 370 pF
oss GS DS
Reverse Transfer Capacitance C 200
rss
c
Total Gate Charge Q 42 60
g
c
Gate-Source Charge Q 7
V = 40 V,, V = 10 V,, I = 40 A nC
gs
DSDS GSGS DD
c
Gate-Drain Charge Q 13
gd
Gate Resistance R 0.5 2.7
g
c
Turn-On Delay Time t 12 20
d(on)
c
Rise Time t 52 80
r
VV = 40 V = 40 V,, R R = 1.0 = 1.0
DDDD LL
nsns
c I 40 A, V = 10 V, R = 2.5
D GEN g
Turn-Off Delay Time t 25 38
d(off)
c
Fall Time t 10 15
f
Source-Drain Diode Ratings and Characteristic (T = 25C)
C
Pulsed Current I 60 A
SM
b
Diode Forward Voltage V I = 40 A, V = 0 V 1.0 1.5 V
SD F GS
Source-Drain Reverse Recovery Time t I = 40 A, di/dt = 100 A/s 45 70 ns
rr F
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 s, duty cycle 2%.
c. Independent of operating temperature.
Document Number: 71323
www.vishay.com
S-40272Rev. C, 23-Feb-04
2