SUM90P10-19L Vishay Siliconix P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R ()I (A) Q (Typ.) DS DS(on) D g Compliant to RoHS Directive 2002/95/EC 0.019 at V = - 10 V - 90 GS - 100 97 nC 0.021 at V = - 4.5 V - 85 GS S TO-263 G Drain Connected to Tab GD S D Top View P-Channel MOSFET Ordering Information: SUM90P10-19L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 100 DS V V Gate-Source Voltage 20 GS T = 25 C - 90 C T = 125 C - 52 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 17.2 A b, c T = 125 C A - 9.9 A Pulsed Drain Current I - 90 DM T = 25 C - 250 C Continuous Source-Drain Diode Current I S b, c T = 25 C A - 9 I - 70 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 245 mJ AS T = 25 C 375 C T = 125 C 125 C P Maximum Power Dissipation W D b, c T = 25 C 13.6 A b, c T = 125 C A 4.5 T , T C Operating Junction and Storage Temperature Range - 55 to 175 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 811 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 0.33 0.4 thJC Notes: a. Package Limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 40 C/W. Document Number: 73474 www.vishay.com S09-0659-Rev. E, 20-Apr-09 1SUM90P10-19L Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 100 V DS GS D V Temperature Coefficient V /T - 125 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.9 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 100 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 100 V, V = 0 V, T = 175 C - 500 DS GS J a I V 10 V, V = - 10 V - 90 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 20 A 0.0156 0.019 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 15 A 0.0173 0.021 GS D a g V = - 15 V, I = - 20 A 80 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 11100 iss C Output Capacitance 700 oss V = - 50 V, V = 0 V, f = 1 MHz pF DS GS C Reverse Transfer Capacitance 1690 rss V = - 50 V, V = - 10 V, I = - 90 A 217 326 DS GS D Total Gate Charge Q g 97 146 nC Q Gate-Source Charge V = - 50 V, V = - 4.5 V, I = - 90 A 42 gs DS GS D Q Gate-Drain Charge 51 gd Gate Resistance R f = 1 MHz 3.5 g t Turn-On Delay Time 20 30 d(on) Rise Time t 510 855 V = - 50 V, R = 0.56 r DD L ns I - 90 A, V = - 10 V, R = 1 t Turn-Off Delay Time D GEN g 145 220 d(off) Fall Time t 870 1300 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode I T = 25 C - 90 S C Current A a I - 250 Pulse Diode Forward Current SM V I = - 20 A Body Diode Voltage - 0.8 - 1.5 V SD S Body Diode Reverse Recovery t 80 120 ns rr Time Body Diode Reverse Recovery Q 220 330 nC rr I = - 20 A, dI/dt = 100 A/s, T = 25 C F J Charge Reverse Recovery Fall Time t 56 a ns t Reverse Recovery Rise Time 24 b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73474 2 S09-0659-Rev. E, 20-Apr-09