X-On Electronics has gained recognition as a prominent supplier of SUP50010E-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SUP50010E-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SUP50010E-GE3 Vishay

SUP50010E-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SUP50010E-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET 60V Vds; 20V Vgs TO-220AB
Datasheet: SUP50010E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.1415 ea
Line Total: USD 4.14

Availability - 1530
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
636 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 3.174
10 : USD 2.967
25 : USD 2.5875
100 : USD 2.254
250 : USD 2.162
500 : USD 2.093
1000 : USD 1.8055
5000 : USD 1.725

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SUP50010E-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUP50010E-GE3 and other electronic components in the MOSFET category and beyond.

SUP50010E www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES TO-220AB TrenchFET power MOSFET Maximum 175 C junction temperature Very low Q reduces power loss from passing gd through V plateau 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SS D G APPLICATIONS Top View D Power supply - Secondary synchronous rectification PRODUCT SUMMARY DC/DC converter V (V) 60 DS Power tools G R max. ( ) at V = 10 V 0.00200 DS(on) GS Motor drive switch R max. ( ) at V = 7.5 V 0.00250 DS(on) GS DC/AC inverter Q typ. (nC) 141 g Battery management d S I (A) 150 D OR-ing / e-fuse Configuration Single N-Channel MOSFET ORDERING INFORMATION Package TO-220 Lead (Pb)-free and halogen-free SUP50010E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS d T = 25 C 150 C Continuous drain current (T = 150 C) I J D d T = 70 C 150 C A Pulsed drain current (t = 100 s) I 500 DM Avalanche current I 60 AS a Single avalanche energy L = 0.1 mH E 180 mJ AS b T = 25 C 375 C a Maximum power dissipation P W D b T = 125 C 125 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-ambient (PCB mount) R 40 thJA C/W Junction-to-case (drain) R 0.4 thJC Notes a. Duty cycle 1 % b. See SOA curve for voltage derating c. When mounted on 1 square PCB (FR4 material) d. Package limited S18-1019-Rev. A, 08-Oct-2018 Document Number: 79578 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SUP50010E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate threshold voltage V V = V , I = 250 A 2 - 4 GS(th) DS GS D Gate-body leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 60 V, V = 0 V - - 1 DS GS A Zero gate voltage drain current I V = 60 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 60 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-state drain current I V 10 V, V = 10 V 120 - - A D(on) DS GS V = 10 V, I = 30 A - 0.00166 0.00200 GS D a Drain-source on-state resistance R DS(on) V = 7.5 V, I = 20 A - 0.00208 0.00250 GS D a Forward transconductance g V = 15 V, I = 30 A - 120 - S fs DS D b Dynamic Input capacitance C - 10 895 - iss Output capacitance C V = 0 V, V = 30 V, f = 1 MHz - 2420 - pF oss GS DS Reverse transfer capacitance C -85 - rss c Total gate charge Q - 141 212 g c Gate-source charge Q V = 30 V, V = 10 V, I = 20 A -43.6 - DS GS D gs nC c Gate-drain charge Q -19.1 - gd V = 50 V, V = 0 V Output charge Q - 143 215 oss DS GS Gate resistance R f = 1 MHz 0.24 1.2 2.4 g c Turn-on delay time t -28 56 d(on) c Rise time t -12 24 r V = 30 V, R = 3 DD L ns 10 A, V = 10 V, R = 1 c I D GEN g Turn-off delay time t - 50 100 d(off) c Fall time t -13 26 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed current (t = 100 s) I - - 250 A SM a I = 10 A, V = 0 V Forward voltage V -0.8 1.5 V SD F GS Reverse recovery time t - 75 150 ns rr Peak reverse recovery charge I -2.8 5.6 A RM(REC) I = 34 A, di/dt = 100 A/s Reverse recovery charge Q F - 0.12 0.24 C rr Reverse recovery fall time t -38 - a ns Reverse recovery rise time t -37 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-1019-Rev. A, 08-Oct-2018 Document Number: 79578 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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