STP14N80K5 STMicroelectronics

STP14N80K5 N-channel 800 V, 0.400 typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R max. I DS DS(on) D STP14N80K5 800 V 0.445 12 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STP14N80K5 14N80K5 TO-220 Tube March 2016 DocID029058 Rev 1 1/14 www.st.com This is information on a product in full production. Contents STP14N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 5 Revision history ............................................................................ 13 2/14 DocID029058 Rev 1