X-On Electronics has gained recognition as a prominent supplier of SUP50020EL-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SUP50020EL-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SUP50020EL-GE3 Vishay

SUP50020EL-GE3 electronic component of Vishay
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See Product Specifications
Part No.SUP50020EL-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 60 V 120A (Tc) 375W (Tc) Through Hole TO-220AB
Datasheet: SUP50020EL-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.22 ea
Line Total: USD 3.22 
Availability - 356
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
356
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 3.22
10 : USD 2.3575
100 : USD 1.794
500 : USD 1.6215
1000 : USD 1.5755

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SUP50020EL-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SUP50020EL-GE3 and other electronic components in the MOSFETs category and beyond.

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SUP50020EL www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET d V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Maximum 175 C junction temperature 0.0023 at V = 10 V 120 GS 60 126 nC Q /Q ratio < 0.25 gd gs 0.0028 at V = 4.5 V 120 GS Operable with logic-level gate drive 100 % R and UIS tested g TO-220AB Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS D Power supply - Secondary synchronous rectification DC/DC converter Power tools G SS Motor drive switch D G Top View DC/AC inverter Battery management Ordering Information: S SUP50020EL-GE3 (lead (Pb)-free and halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS d T = 25 C 120 C Continuous Drain Current (T = 150 C) I J D d T = 70 C 120 C A Pulsed Drain Current (t = 100 s) I 300 DM Avalanche Current I 75 AS L = 0.1 mH a Single Avalanche Energy E 281 mJ AS b T = 25 C 375 C a Maximum Power Dissipation P W D b T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMITUNIT c Junction-to-Ambient (PCB Mount) R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1 square PCB (FR4 material). d. Package limited. S15-1868-Rev. A, 10-Aug-15 Document Number: 68273 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SUP50020EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate Threshold Voltage V V = V , I = 250 A 1.2 - 2.5 GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 20 V - - 250 nA GSS DS GS V = 60 V, V = 0 V - - 1 DS GS A Zero Gate Voltage Drain Current I V = 60 V, V = 0 V, T = 125 C - - 150 DSS DS GS J V = 60 V, V = 0 V, T = 175 C - - 5 mA DS GS J a On-State Drain Current I V 10 V, V = 10 V 120 - - A D(on) DS GS V = 10 V, I = 30 A - 0.0019 0.0023 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 20 A - 0.0023 0.0028 GS D a Forward Transconductance g V = 15 V, I = 30 A - 145 - S fs DS D b Dynamic Input Capacitance C - 11 113 - iss Output Capacitance C V = 0 V, V = 30 V, f = 1 MHz - 4625 - pF oss GS DS Reverse Transfer Capacitance C -475- rss c Total Gate Charge Q - 126 - g c Gate-Source Charge Q V = 30 V, V = 10 V, I = 20 A - 31.2 - nC gs DS GS D c Gate-Drain Charge Q -7.1- gd Gate Resistance R f = 1 MHz 0.32 1.6 3.2 g c Turn-On Delay Time t -15 30 d(on) c Rise Time t -20 40 r V = 30 V, R = 5 DD L ns I 10 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -55100 d(off) c Fall Time t -11 20 f b Drain-Source Body Diode Ratings and Characteristics (T = 25 C) C Pulsed Current (t = 100 s) I -- 300 A SM a Forward Voltage V I = 10 A, V = 0 V - 0.8 1.5 V SD F GS Reverse Recovery Time t - 120 180 ns rr Peak Reverse Recovery Charge I I = 39 A, di/dt = 100 A/s -5 10 A RM(REC) F Reverse Recovery Charge Q - 0.287 0.430 C rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1868-Rev. A, 10-Aug-15 Document Number: 68273 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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