TEMT7000X01 www.vishay.com Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES Package type: surface-mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 AEC-Q101 qualified High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: = 60 20043 Package matched with IR emitter series VSMB1940X01 Floor life: 168 h, MSL 3, according to J-STD-020 Lead (Pb)-free reflow soldering DESCRIPTION Material categorization: for definitions of compliance TEMT7000X01 is a high speed silicon NPN epitaxial planar please see www.vishay.com/doc 99912 phototransistor in a miniature 0805 package for surfac e mounting on printed boards. The device is sensitive to APPLICATIONS visible and near infrared radiation. Detector in automotive applications Light sensors Radiation sensors PRODUCT SUMMARY I (A) ca COMPONENT () (nm) 0.1 2 at E = 1 mW/cm , = 950 nm, V = 5 V e CE TEMT7000X01 225 to 675 60 470 to 1090 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMT7000X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V 20 V CEO Emitter collector voltage V 7V ECO Collector current I 20 mA C Power power dissipation T 55 C P 100 mW amb V Junction temperature T 100 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to reflow profile Fig. 8 T 260 C sd Thermal resistance junction-to-ambient According to J-STD-051 R 270 K/W thJA Rev. 1.3, 31-Jul-2020 Document Number: 81961 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMT7000X01 www.vishay.com Vishay Semiconductors 120 100 80 60 R = 270 K/W thJA 40 20 0 0 10 203040 50607080 90 100 21331-1 T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 0.1 mA V 20 - - V C CEO Collector dark current V = 5 V, E = 0 I - 1 100 nA CE CEO Collector emitter capacitance V = 0 V, f = 1 MHz, E = 0 C -25- pF CE CEO 2 E = 1 mW/cm , = 950 nm, e Collector light current I 225 450 675 A CA V = 5 V CE Angle of half sensitivity - 60 - Wavelength of peak sensitivity -850 - nm p Range of spectral bandwidth - 470 to 1090 - nm 0.1 Collector emitter saturation voltage I = 0.05 mA V -- 0.4 V C CEsat 2 E = 1 mW/cm , = 950 nm, e Temperature coefficient of I Tk -1.1 - %/K ca Ica V = 5 V CE BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 000 10 I = 0 F 1000 1 V = 70 V CE V = 25 V CE V = 5 V 100 CE 0.1 V = 5 V CE 10 0.01 1 0.001 0.01 0.1 1 10 0 1020 3040 5060 7080 90100 21551-1 20594 E - Irradiance (mW/cm) T - Ambient Temperature (C) e amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Collector Light Current vs. Irradiance Rev. 1.3, 31-Jul-2020 Document Number: 81961 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Collector Dark Current (nA) P - Power Dissipation (mW) CE0 V I - Collector Light Current (mA) ca