V10P45S-M3
www.vishay.com
Vishay General Semiconductor
SMD Photovoltaic Solar Cell Protection Schottky Rectifier
Ultra Low V = 0.34 V at I = 5 A
F F
FEATURES
Very low profile - typical height of 1.1 mm
TMBS eSMP Series
Ideal for automated placement
Trench MOS Schottky technology
K
Low forward voltage drop, low power losses
High efficiency operation
1
2 Meets MSL level 1, per J-STD-020, LF maximum peak of
260 C
TO-277A (SMPC)
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
K Anode 1
Cathode Anode 2
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
I 10 A
F(AV)
MECHANICAL DATA
V 45 V
RRM
Case: TO-277A (SMPC)
I 180 A
FSM
Molding compound meets UL 94 V-0 flammability rating
V at I = 10 A 0.41 V
F F Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
T max. 150 C
OP
Package TO-277A (SMPC)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Diode variation Single die
M3 suffix meets JESD 201 class 2 whisker test
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V10P45S UNIT
Device marking code 1045S
Maximum repetitive peak reverse voltage V 45 V
RRM
(1)
I 10
F
Maximum DC forward current A
(2)
I 4.4
F
Peak forward surge current 10 ms single half sine-wave
I 180 A
FSM
superimposed on rated load
Junction temperature in DC forward current
(3)
T 200 C
J
without reverse bias, t 1 h
Operating junction temperature range T -40 to +150 C
OP
Storage temperature range T -40 to +175 C
STG
Notes
(1)
Mounted on 30 mm x 30 mm aluminum PCB
(2)
Free air, mounted on recommended copper pad area
(3)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
Revision: 28-Nov-13 Document Number: 89341
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10P45S-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
I = 5.0 A 0.42 -
F
T = 25 C
A
I = 10 A 0.48 0.57
F
(1)
Instantaneous forward voltage V V
F
I = 5.0 A 0.34 -
F
T = 125 C
A
I = 10 A 0.41 0.50
F
T = 25 C 21 800 A
A
(2)
Reverse current V = 45 V I
R R
T = 125 C 9 35 mA
A
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V10P45SUNIT
(1)
R 75
JA
Typical thermal resistance C/W
(2)
R 4
JM
Notes
(1)
Free air, mounted on recommended copper pad area; thermal resistance R - junction to ambient
JA
(2)
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R - junction to mount
JM
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V10P45S-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
V10P45S-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
12 7
(1)
D = 0.8
T = 126 C D = 0.5
M
6
10
D = 0.3
D = 0.2
5
8
D = 0.1 D = 1.0
4
6
(2)
T = 25 C 3
A
T
4
2
2
1
D = t /T t
p p
0 0
0 25 50 75 100 125 150 062418012
T - Mount Temperature (C) Average Forward Current (A)
M
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
Notes
(1)
Mounted on 30 mm x 30 mm aluminum PCB; T measured
M
at the terminal of cathode band (R = 4 C/W)
JM
(2)
Free air, mounted on recommended copper pad area
(R = 75 C/W)
JA
Revision: 28-Nov-13 Document Number: 89341
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DC Forward Current (A)
Average Power Loss (W)