V30100CI www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.43 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 TYPICAL APPLICATIONS 1 For use in high frequency converters, switching power PIN 1 PIN 2 supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PIN 3 CASE MECHANICAL DATA PRIMARY CHARACTERISTICS Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating I 2 x 15 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 100 V RRM commercial grade I 160 A FSM Terminals: matte tin plated leads, solderable per V at I = 15 A (125 C) 0.62 V F F J-STD-002 and JESD 22-B102 T max. 150 C M3 suffix meets JESD 201 class 1A whisker test J Package TO-220AB Polarity: as marked Circuit configuration Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30100CI UNIT Maximum repetitive peak reverse voltage V 100 RRM V Maximum DC reverse voltage V 80 DC per device 30 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 15 Peak forward surge current 8.3 ms single half sine-wave superimposed I 160 A FSM on rated load per diode (1) Operating junction temperature range T -40 to +150 J C Storage temperature range T -55 to +150 STG Note (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT <1/ R D J JA Revision: 28-Sep-17 Document Number: 87543 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V30100CI www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.50 - F I = 7.5 A T = 25 C 0.55 - F A I = 15 A 0.70 0.77 F Instantaneous forward voltage (1) V V F per diode I = 5 A 0.43 - F I = 7.5 A T = 125 C 0.50 - F A I = 15 A 0.62 0.68 F T = 25 C 0.01 - A V = 80 V R T = 125 C 7.0 - A (2) Reverse current per diode I mA R T = 25 C - 0.5 A V = 100 V R T = 125 C 12.0 30 A Junction capacitance 4 V, 1MHz C 1450 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30100CIUNIT Typical thermal resistance per device R 1.8 C/W JC ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE V30100CI-M3/P 1.88 P 50/tube Tube Revision: 28-Sep-17 Document Number: 87543 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000