V30150C, VF30150C, VB30150C, VI30150C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.56 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, 3 3 2 2 1 per JESD 22-B106 (for TO-220AB, ITO-220AB and V30150C VF30150C 1 TO-262AA package) PIN 1 PIN 1 PIN 2 PIN 2 Material categorization: for definitions of compliance CASE PIN 3 PIN 3 please see www.vishay.com/doc 99912 2 D PAK (TO-263AB) TO-262AA TYPICAL APPLICATIONS K K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 MECHANICAL DATA 3 2 2 1 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and VB30150C VI30150C TO-262AA PIN 1 K PIN 1 PIN 2 Molding compound meets UL 94 V-0 flammability rating PIN 2 HEATSINK PIN 3 K Base P/N-E3 - RoHS-compliant, commercial grade click logo to get started DESIGN SUPPORT TOOLS Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Models Available Polarity: as marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS I 2 x 15 A F(AV) V 150 V RRM I 140 A FSM V at I = 15 A 0.71 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30150C VF30150C VB30150C VI30150C UNIT Max. repetitive peak reverse voltage V 150 V RRM per device 30 A Max. average forward rectified current (fig. 1) I F(AV) per diode 15 Peak forward surge current 8.3 ms single half sine-wave superimposed I 140 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 110 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C p J I 0.5 A RRM per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 19-Jun-2018 Document Number: 89047 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V30150C, VF30150C, VB30150C, VI30150C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 150 (min.) - V R A BR I = 5 A 0.72 - F I = 7.5 A T = 25 C 0.81 - F A I = 15 A 1.11 1.36 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.56 - F I = 7.5 A T = 125 C 0.61 - F A I = 15 A 0.71 0.79 F T = 25 C 1.5 - A A V = 100 V R T = 125 C 2 - mA A (2) Reverse current per diode I R T = 25 C - 200 A A V = 150 V R T = 125 C 4 20 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V30150CVF30150CVI30150CVI30150CUNIT Typical thermal resistance per diode R 2.2 4.5 2.2 2.2 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V30150C-E3/4W 1.89 4W 50/tube Tube ITO-220AB VF30150C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB30150C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB30150C-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI30150C-E3/4W 1.46 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 40 14 D = 0.8 Resistive or Inductive Load D = 0.5 12 D = 0.3 V(B,I)30150C 30 D = 0.2 10 8 D = 1.0 20 D = 0.1 VF30150C 6 T 4 10 2 D = t /T t Mounted on Specific Heatsink p p 0 0 02 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 175 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 19-Jun-2018 Document Number: 89047 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)