333 3 V8P20 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.60 V at I = 4 A F F FEATURES eSMP Series Very low profile - typical height of 1.1 mm Ideal for automated placement K Trench MOS Schottky technology Low forward voltage drop, low power losses 1 High efficiency operation 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance SMPC (TO-277A) please see www.vishay.com/doc 99912 K Anode 1 Anode 2 Cathode TYPICAL APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating I 8.0 A F(AV) Base P/N-M3 - halogen-free, RoHS compliant, an d V 200 V RRM commercial grade I 150 A FSM Terminals: matte tin plated leads, solderable per V at I = 8.0 A 0.68 V F F J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package SMPC (TO-277A) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V8P20 UNIT Device marking code V820 Maximum repetitive peak reverse voltage V 200 V RRM (1) I 8.0 F Maximum average forward rectified current (fig. 1) A (2) I 2.2 F Peak forward surge current 10 ms single half sine-wave I 150 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area Revision: 09-Dec-2020 Document Number: 89315 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V8P20 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 4 A 0.80 - F T = 25 C A I = 8 A 0.95 1.40 F (1) Instantaneous forward voltage V V F I = 4 A 0.60 - F T = 125 C A I = 8 A 0.68 0.76 F T = 25 C 2.0 - A A V = 180 V R T = 125 C 2.1 - mA A (2) Reverse current I R T = 25 C 6.4 250 A A V = 200 V R T = 125 C 3.4 20 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V8P20UNIT (1) R 80 JA Typical thermal resistance C/W (2) R 4 JM Notes (1) Free air, mounted on recommended copper pad area thermal resistance R - junction to ambient JA (2) Mounted on 30 mm x 30 mm Al PCB thermal resistance R - junction to mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V8P20-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel V8P20-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel Revision: 09-Dec-2020 Document Number: 89315 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000