VESD09A4A-HSF www.vishay.com Vishay Semiconductors 4-Line (Quad) ESD Protection Diode Array in LLP75-6L FEATURES Compact LLP75-6L package 6 5 4 Low package height < 0.6 mm 4-line ESD protection (quad) Low leakage current < 0.1 A 1 2 3 Low load capacitance C = 6 pF D 21002 20453 1 ESD immunity acc. IEC 61000-4-2 8 kV contact discharge MARKING (example only) 10 kV air discharge Surge current acc. IEC 61000-4-5 I > 1.5 A PP XX Soldering can be checked by standard vision inspection. No X-ray necessary YY 21001 e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) Dot = pin 1 marking Material categorization: for definitions of compliance XX = date code please see www.vishay.com/doc 99912 YY = type code (see table below) click logo to get started DESIGN SUPPORT TOOLS Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VESD09A4A-HSF VESD09A4A-HSF-GS08 3000 15 000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD09A4A-HSF LLP75-6L 49 4.2 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD09A4A-HSF PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6) Peak pulse current I 1.5 A PPM acc. IEC 61000-4-5 t = 8/20 s single shot p BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6) Peak pulse power P 30 W PP acc. IEC 61000-4-5 t = 8/20 s single shot p Contact discharge acc. IEC 61000-4-2 10 pulses V 8 kV ESD BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6) ESD immunity Air discharge acc. IEC 61000-4-2 10 pulses V 10 kV ESD BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6) Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C STG Rev. 1.7, 04-Jan-2019 Document Number: 81834 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VESD09A4A-HSF www.vishay.com Vishay Semiconductors BiAs-MODE (4-line bidirectional asymmetrical protection mode) With the VESD09A4A-HSF up to 4 signal- or data-lines (L1 to L4) can be protected against voltage transients. With pin 2 connected to ground and pin 1, 3, 4 and 6 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the RWM protection diode between data line and ground offer a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the breakthrough voltage (V ) level plus the voltage drop at the series impedance C BR (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative transient close to the ground level. F Due to the different clamping levels in forward and reverse direction the VESD09A4A-HSF clamping behaviour is bidirectional and asymmetrical (BiAs). L4 L3 6 5 4 1 2 3 L1 L2 21003 ELECTRICAL CHARACTERISTICS VESD09A4A-HSF (Pin 1, 3, 4, or 5 to pin 2) (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand-off voltage Max. reverse working voltage V -- 9 V RWM Reverse voltage at I = 0.1 A V 9- - V R R Reverse current at V = V = 9 V I - < 0.01 0.1 A R RWM R Reverse breakdown voltage at I = 1 mA V 11.2 13 V R BR Reverse clamping voltage at I = 1.5 A, acc. IEC 61000-4-5 V -23V PP C Forward clamping voltage at I = 1.5 A, acc. IEC 61000-4-5 V-2V F F at V = 0 V f = 1 MHz C -6.2 10 pF R D Capacitance at V = 4.5 V f = 1 MHz C -3.2 4 pF R D Note BiAs mode (between pin 1 and pin 2). If a higher surge current or peak pulse current (I ) is needed, some protection diodes in the VESD09A4A-HSF can also be used PP in parallel in order tomultipl the performance. If two diodes are switched in parallel you get double surge power = double peak pulse current (2 x I ) PPM half of the line inductance = reduced clamping voltage half of the line resistance = reduced clamping voltage double line capacitance (2 x C ) D double reverse leakage current (2 x I ) R 6 5 4 L1 L2 1 2 3 21004 Rev. 1.7, 04-Jan-2019 Document Number: 81834 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000