VFT2080S www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.46 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AB Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 VFT2080S TYPICAL APPLICATIONS PIN 1 PIN 2 For use in high frequency DC/DC converters, switching PIN 3 power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AB I 20 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 80 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 150 A commercial grade FSM V at I = 20 A 0.70 V Terminals: matte tin plated leads, solderable per F F J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package ITO-220AB Polarity: as marked Circuit configuration Single Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLVFT2080SUNIT Maximum repetitive peak reverse voltage V 80 V RRM Maximum average forward rectified current (fig. 1) I 20 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage from termal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 16-Mar-18 Document Number: 89261 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VFT2080S www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.52 - F I = 10 A T = 25 C 0.61 - F A I = 20 A 0.80 0.92 F (1) Instantaneous forward voltage V V F I = 5 A 0.46 - F I = 10 A T = 125 C 0.54 - F A I = 20 A 0.70 0.78 F T = 25 C 30 700 A A (2) Reverse current V = 80 V I R R T = 125 C 20 35 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT2080S UNIT Typical thermal resistance R 5.0 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VFT2080S-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 24 20 D = 0.5 D = 0.8 Resistive or Inductive Load D = 0.3 18 20 D = 0.2 16 14 D = 0.1 16 D = 1.0 12 12 10 8 T 8 6 4 4 2 D = t /T t p p 0 0 0 25 50 75 100 125 150 175 01418226024 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Dissipation Characteristics Revision: 16-Mar-18 Document Number: 89261 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Average Power Loss (W)