Product Information

VS-12CDU06HM3I

VS-12CDU06HM3I electronic component of Vishay

Datasheet
Vishay Semiconductors Rectifiers Dual 2x6A 600V FRED Pt AEC-Q101

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.706 ea
Line Total: USD 2.71

799 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2418 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.8628
10 : USD 1.5187
100 : USD 1.1829
500 : USD 1.0026
1000 : USD 0.8175
2000 : USD 0.7558
4000 : USD 0.7309
10000 : USD 0.6976
24000 : USD 0.6799

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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333 3 VS-12CDU06HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 6 A FRED Pt FEATURES eSMP Series Ultrafast recovery time, reduced Q , and sof t rr SMPD (TO-263AC) recovery 175 C maximum operating junction temperature K For PFC CRM, snubber operation Low forward voltage drop 1 Low leakage current 2 Meets MSL level 1, per J-STD-020, LF maximum peak Top View Bottom View of 260 C AEC-Q101 qualified, meets JESD 201 class 2 whisker test Anode 1 K Material categorization: for definitions of compliance Anode 2 Cathode please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES State of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage 3D Models drop and ultrafast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. PRIMARY CHARACTERISTICS These devices are intended for use in PFC, boost, in the I 2 x 6 A F(AV) AC/DC section of SMPS, freewheeling and clamp diodes. V 600 V R Their extremely optimized stored charge and low recovery V at I 0.89 V F F current minimize the switching losses and reduce power t 45 ns rr dissipation in the switching element and snubbers T max. 175 C J MECHANICAL DATA Package SMPD (TO-263AC) Circuit configuration Common cathode Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM per device 12 Average rectified forward current I T = 156 C F(AV) solder pad per diode 6 A per device 200 Non-repetitive peak surge current I T = 25 C, 6 ms square pulse FSM J per diode 105 ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 6 A - 1.05 1.3 V F Forward voltage, per diode V F I = 6 A, T = 150 C - 0.89 1.1 F J V = V rated - - 5 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - 20 150 J R R Junction capacitance, per diode C V = 600 V - 8 - pF T R Revision: 21-Jan-2021 Document Number: 95811 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-12CDU06HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 45 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 60 F R rr Reverse recovery time t ns rr T = 25 C -65 - J T = 125 C - 90 - J I = 6 A, F T = 25 C - 10 - J Peak recovery current I dI /dt = 500 A/s, A RRM F T = 125 C - 15 - J V = 400 V R T = 25 C - 350 - J Reverse recovery charge Q nC rr T = 125 C - 680 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - +175 C J Stg temperature range Thermal resistance, per diode R -1.8 2.5 C/W thJM junction to mount 0.55 g Approximate weight 0.02 oz. Marking device Case style SMPD (TO-263AC) 12CDU06 100 100 T = 175 C J T = 150 C J 10 10 T = 175 C J T = 125 C J T = 150C J 1 T = 125C J 1 T = 25C 0.1 J T = 25 C J T = -40 C J 0.01 0.1 0 100 200 300 400 500 600 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 21-Jan-2021 Document Number: 95811 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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