VS-10ETF..SPbF Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base Glass passivated pellet chip junction cathode + Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C Designed and qualified for industrial level 2 Material categorization: 3 for definitions of compliance please see 1 www.vishay.com/doc 99912 13 2 TO-263AB (D PAK) Anode -- Anode APPLICATIONS Output rectification and freewheeling in inverters, choppers and converters PRODUCT SUMMARY 2 Input rectifications where severe restrictions on Package TO-263AB (D PAK) conducted EMI should be met I 10 A F(AV) V 200 V, 400 V, 600 V R DESCRIPTION V at I 1.2 V F F The VS-10ETF..SPbF fast soft recovery rectifier series has I 140 A FSM been optimized for combined short reverse recovery time t 50 ns rr and low forward voltage drop. T max. 150 C J The glass passivation ensures stable reliable operation in Diode variation Single die the most severe temperature and power cycling conditions. Snap factor 0.6 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 200 to 600 V RRM I Sinusoidal waveform 10 F(AV) A I 140 FSM t 1 A, 100 A/s 50 ns rr V 10 A, T = 25 C 1.2 V F J T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETF02SPbF 200 300 VS-10ETF04SPbF 400 500 2.5 VS-10ETF06SPbF 600 700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 128 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 115 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 140 10 ms sine pulse, rated V applied 66 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 94 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 940 A s Revision: 11-Feb-16 Document Number: 94091 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10ETF..SPbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 10 A, T = 25 C 1.2 V FM J Forward slope resistance r 12.7 m t T = 150 C J Threshold voltage V 1.25 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 2.5 J RECOVERY CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS I FM Reverse recovery time t 200 ns rr I at 10 A F pk t rr Reverse recovery current I 25 A/s 2.75 A rr t dir 25 C Reverse recovery charge Q 0.32 C rr dt Q rr Snap factor S 0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance R DC operation 1.5 thJC junction to case C/W Maximum thermal resistance (1) R 40 thJA junction to ambient (PCB mount) Soldering temperature T 260C S 2g Approximate weight 0.07 oz. 10ETF02S 2 Marking device Case style D PAK (SMD-220) 10ETF04S 10ETF06S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note AN-994. Revision: 11-Feb-16 Document Number: 94091 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000