VS-10ETS08FP-M3, VS-10ETS12FP-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Very low forward voltage drop 150 C max. operating junction temperature Glass passivated pellet chip junction 1 2 Designed and qualified according to 1 Cathode Anode JEDEC -JESD 47 2 Fully isolated package (V = 2500 V ) INS RMS 2L TO-220 FullPAK UL pending Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 10 A APPLICATIONS F(AV) Input rectification V 800 V to 1200 V R Vishay Semiconductors switches and output rectifiers V at I 1.1 V F F which are available in identical package outlines I 160 A FSM T max. 150 C J DESCRIPTION Package 2L TO-220 FullPAK High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. Circuit configuration Single These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, A T = 125 C common heatsink 12.0 16.0 A J of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 10 A F(AV) V Range 800, 1200 V RRM I 160 A FSM V 10 A, T = 25 C 1.1 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM I RRM RRM NON-REPETITIVE PEAK PART NUMBER PEAK REVERSE VOLTAGE AT 150 C REVERSE VOLTAGE V mA V VS-10ETS08FP-M3 800 900 0.5 VS-10ETS12FP-M3 1200 1300 Revision: 15-Sep-17 Document Number: 96295 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10ETS08FP-M3, VS-10ETS12FP-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 135 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated V applied 91 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 130 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1300 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 10 A, T = 25 C 1.1 V FM J Forward slope resistance r 20 m t T = 150 C J Threshold voltage V 0.82 V F(TO) T = 25 C 0.05 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 0.50 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 2.5 thJC junction to case Maximum thermal resistance, R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 10ETS08FP Marking device Case style 2L TO-220 FullPAK 10ETS12FP Revision: 15-Sep-17 Document Number: 96295 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000