Product Information

VS-15ETH03STRLPBF

VS-15ETH03STRLPBF electronic component of Vishay

Datasheet
Vishay Semiconductors Rectifiers 300 Volt 15 Amp 22ns

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 1.9234
10 : USD 1.6016
100 : USD 1.2369
500 : USD 1.0796
800 : USD 0.9194
2400 : USD 0.9194
4800 : USD 0.9194
9600 : USD 0.8847
24800 : USD 0.8498
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Termination Style
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Tradename
LoadingGif

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VS-15ETH03SPbF, VS-15ETH03-1PbF www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature 2 TO-263AB (D PAK) TO-262AA Meets MSL level 1, per J-STD-020, LF maximum Base peak of 260 C cathode 2 AEC-Q101 qualified 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 1 3 1 3 Vishay Semiconductors 300 V series are the state of the art N/C Anode N/C Anode hyperfast recovery rectifiers designed with optimized VS-15ETH03SPbFVS-15ETH03-1PbF performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control PRODUCT SUMMARY guarantee the best overall performance, ruggedness and 2 Package TO-263AB (D PAK), TO-262AA reliability characteristics. I 15 A F(AV) These devices are intended for use in the output rectification V 300 V stage of SMPS, UPS, DC/DC converters as well as R freewheeling diodes in low voltage inverters and chopper V at I 0.85 V F F motor drives. t (typ.) 40 ns rr Their extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce over Diode variation Single diode dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 300 V RRM Average rectified forward current I T = 142 C 15 F(AV) C A Non-repetitive peak surge current I T = 25 C 140 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 15 A - 1.05 1.25 F Forward voltage V F I = 15 A, T = 125 C - 0.85 1.00 F J V = V rated - 0.05 40 R R Reverse leakage current I A R T = 125 C, V = V rated - 12 400 J R R Junction capacitance C V = 300 V - 45 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 09-Jul-15 Document Number: 94001 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-15ETH03SPbF, VS-15ETH03-1PbF www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 40 F F R Reverse recovery time t T = 25 C -32 - ns rr J T = 125 C - 45 - J I = 15 A T = 25 C F - 2.4 - J Peak recovery current I dI /dt = -200 A/s A RRM F T = 125 C - 6.1 - J V = 200 V R T = 25 C - 38 - J Reverse recovery charge Q nC rr T = 125 C - 137 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.022.0 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 70 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth R -0.2 - thCS case to heatsink and greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK 15ETH03S Marking device Case style TO-262 15ETH03-1 100 1000 T = 175 C J 100 T = 150 C J T = 125 C 10 J T = 175 C J T = 100 C J T = 125 C J 10 1 T = 25 C J 0.1 T = 25 C J 0.01 1 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 50 100 150 200 250 300 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Jul-15 Document Number: 94001 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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